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Material Developments
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1.2KBatteries and Portable PowerGrowing Number of Wall Chargers are using GaN Power Devices
Wall chargers are among the first consumer application that uses GaN devices. The main advantage of moving from Si to GaN is...
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858Power ComponentsSDK Announces Second-Generation of High-Grade SiC Epitaxial Wafers
Showa Denko (SDK) has developed a second generation of high-grade SiC epitaxial wafers (HGE-2G) for power semiconductors. SDK has been mass-producing the...
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1.2KPower ComponentsTransphorm gets $18.5 Million to Establish Domestic Source of GaN Epiwafers
Transphorm Inc. announced that the U.S. Department of Defense (DoD) Office of Naval Research (ONR) has exercised a three-year $15.9 million option...
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1.7KPower Components30kW Three-Phase Vienna PFC Reference Design Leverages SiC Diodes and MOSFETs
Microsemi Corporation offers the MSCSICPFC/REF5, a scalable 30kW, three-phase Vienna power factor correction (PFC) topology reference design featuring its silicon carbide (SiC)...
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737Power ComponentsSingle IC Integrates Sensing, Energy-Harvesting, and Energy Storage
Researchers at King Abdullah University of Science and Technology (KAUST) have successfully combined sensing, energy-harvesting, current-rectifying, and energy-storage functions into a single...
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1.4KComponents1200V 450A All SiC Half-Bridge Module Maximizes Power Density
Wolfspeed‘s CAB450M12XM3 1200V 450A all silicon carbide half-bridge module maximizes power density while minimizing loop inductance and enabling simple power bussing. The...
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1.2KComponents600V E-Mode GaN Power Transistor offers Fast Turn On/Off with Minimum Loses
The IGT60R190D1S CoolGaN™ 600V e-mode power transistor from Infineon delivers fast turn-on and turn-off speed, minimum switching losses and enables simple half bridge...
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878Components60W GaN Power Amplifier for Commercial and Military Applications
The QPA2308 MMIC power amplifier from Qorvo provides high-power density and power-added efficiency for 5GHz to 6GHz RF-based designs. Fabricated on Qorvo’s...
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1.1KComponentsPower Integrations Releases GaN-Based AC-DC Converter ICs
Power Integrations today announced new members of its InnoSwitch™3 families of offline CV/CC flyback switcher ICs. The new ICs feature up to...
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610Power Components150mm Bulk SiC Crystal for Rapidly Expanding Markets
GT Advanced Technologies (GTAT) has announced its CrystX™ silicon carbide (SiC) material for use in power electronics applications such as electric vehicles....
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1.1KComponentsHigh Speed 650V Half-Bridge Driver for GaN Power Switches
The NCP51820 high−speed, gate driver from ON Semiconductor is designed to meet the stringent requirements of driving enhancement mode (e−mode), high electron...
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869ComponentsHard Switching 650V SiC FETs in TO220-3L Package
UnitedSiC has added two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs. The...
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855Power ComponentsSUNY Poly Researchers Awarded $1.5M to Develop SiC MOSFETs and AlGaN/GaM HEMTs
SUNY Polytechnic Institute reported that Interim Vice President of Research Advancement and Graduate Studies, Dr. Shadi Shahedipour-Sandvik and Associate Professor of Nanoengineering,...
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445Power ComponentsSearch for New Power Semiconductors Heats up with Chem Etching of Gallium Oxide
University of Illinois electrical engineers have cleared another hurdle in high-power semiconductor fabrication by adding the field's hottest material - beta-gallium oxide...
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984Components1200V Hybrid SiC and IGBT Power Module
Infineon has introduced a 1200V version of it the EasyPACK™ 2B hybrid SiC and IGBT power module. The company says that compared...
