Cree Inc. (Durham, NC) demonstrated a silicon carbide (SiC) PiN power diode and a SiC power MOSFET transistor operating with power levels 10 times greater than those a year ago. The 10kV SiC PiN diode rectifier has an area of 9sqmm, a current capability of 20A and a pulsed-power capability of 200A. The company said […]
Ault Inc. (Minneapolis, MN) announced the introduction of high-efficiency half-brick and quarter-brick dc/dc converters. Ault is private-labeling the products through an agreement...
Fairchild Semiconductor International (San Jose, CA) announced the FAN6555, a low-cost, fully integrated switching regulator designed specifically to handle the termination requirements...
IRC Inc.'s (Corpus Christi, TX) Advanced Film Division recently developed a jumper with extremely low resistance, inductance ratings less than 0.2nH, and...
Beta Dyne Inc. (Bridgewater, MA) introduced its new 30W Series of dual 15W dc/dc converters offering a 3:1 input-voltage range, 1.5Vdc to...
BI Technologies' (Fullerton, CA) Magnetic Components Division introduced a high-performance, low-profile, surface-mount inductor with a closed magnetic circuit design for high-density PC...
Pulse Engineering (San Diego, CA) introduced its new series of low-profile, highly efficient 30W planar transformers, which are a size and weight reduction of up to 60 percent in dc power supplies or in discrete power supply systems, according to the company. Primary applications for the new transformer series include telecom power systems, industrial control […]
National Semiconductor (Santa Clara, CA) announced the launch of WEBENCH 3.0, extending its suite of online design and prototyping tools for power supply and wireless phase-locked loop and loop-filter designs. The WEBENCH 3.0 is a free interactive online workbench that accelerates designs through selection, electrical and thermal simulation, and virtual physical layout. WEBENCH also integrates […]
International Rectifier Corp. (IR, El Segundo, CA) announced that the Defense Supply Center Columbus (DSCC) has granted JANS certification for IR's HEXFET America wafer fabrication facility located in Temecula, CA. The wafer facility is certified for compliance with MIL-PRF-19500, certifying production of JANS n- and p-channel power MOSFET wafers for use in high-reliability applications. Richard […]
General Semiconductor Inc. (Melville, NY) introduced a ultra-small leadless package that has been designed to meet the space and performance requirements for tomorrow's new electronic products. The initial version is a six-pin leadless package that meets the power-handling capability of an industry-standard SOT-23 with the footprint (1.6mm x 1.6mm) of a SC-75, which takes up […]
LeCroy Europe (Switzerland) introduced the model PS354 low-noise differential amplifier with differential probes and a variety of supporting hardware and software. Along...
Shenzhen Shengtai Ind. Co. Ltd. (China) announced its new STB-015 (10W to 15W), STB-020 (20W), STB-035 (35W) and STB-050 (50W) switching power supplies, which provide over-voltage protection and short-circuit protection, and exhibit high efficiency, high stability and reliability. Applications include portable DVD players, network hubs, automotive stereo systems, telecom devices, computer equipment and medical instrumentation. […]
Chinfa Electronics Ind. Co. Ltd. (Taiwan) announced the new TDD25 Series of 23W to 25W dc/dc converters, which feature short-circuit protection and...
Diodes Inc. (Westlake Village, CA) reported financial results for the third quarter ended September 30, 2001. Revenues for the third quarter were $22.7 million, a sequential increase of eight percent from the second quarter of 2001, but a 29.8 percent decrease as compared to $32.3 million for the third quarter of 2000. Third-quarter results include […]
Diodes Inc. (Westlake Village, CA) announced the development of a breakthrough high-precision zener diode process. Diodes intends to use the new process to develop a line of subminiature, surface-mount zener devices. FabTech Inc., a wholly owned subsidiary of Diodes, developed the new process, which surpasses the traditional method of high-temperature diffusion with a precision, high-velocity […]