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Material Developments
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885Power ComponentsNext-Gen GaN-on-SiC Power Devices from New Epi Growth Mechanism
SweGaN AB has collaborated with top scientists from Linköping University in Sweden and The Institute of Electronics, Microelectronics and Nanotechnology (IEMN), a French...
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2.8KComponentsSiC FETs in 2.2kW / 80+ Titanium Bridgeless Totem-Pole PFC Reference Design
In Cree‘s CRD-02AD09N reference design board, the main power board carrying PFC circuit has been implemented on a 4-layer printed circuit board...
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833ComponentsLow-Cost Thermal Solution for High-Power GaN Converters – Eval Board
The GSP665x-EVBIMS2 from GaN Systems is a horizontal Insulated Metal Substrate (IMS) evaluation platform that can be used to evaluate the electrical...
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918Power ComponentsEval Board for SiC MOSFET Modules in a 22.5kW Bidirectional Buck-Boost Converter
The EVAL-PS-E1BF12-SiC board from Infineon Technologies is designed to enable the evaluation of the company’s FF11MR12W1M1_B11 and F23MR12W1M1_B11 CoolSiC™ silicon carbide MOSFET...
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658Power ComponentsCree and STMicro Expand and Extend SiC Wafer Supply Agreement
Cree, Inc. and STMicroelectronics announced today the expansion and extension of an existing multi-year, long-term silicon carbide (SiC) wafer supply agreement to...
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1.1KComponentsNexperia Enters Gallium Nitride Race with 600V / 60mΩ FET
Nexperia today announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650-Volt GAN063-650WSA, a very robust...
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550Power ComponentsCree and ABB Partner to Deliver Automotive and Industrial SiC Solutions
Cree, Inc. and ABB’s Power Grids business have announced a partnership to jointly expand the rollout of silicon carbide in the rapidly-growing...
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1.5KComponentsSiC MOSFET Driver with Desaturation Protection and Negative Bias
Inventchip Technology Co., Ltd. (IVCT), today announced the RTM of IVCR1401, the industry’s first silicon carbide MOSFET driver with desaturation protection and...
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1.8KPower ComponentsSoitec and Applied Materials Partner on Advanced SiC Substrates
Soitec announced a joint development program with Applied Materials on next-generation silicon carbide substrates. The program aims to provide technology and products...
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1.5KPower Components1400W 12V High-Efficiency Phase-Shift Full-Bridge Evaluation Board
The EVAL_1K4W_ZVS_FB_SMD dc-dc converter evaluation board proves the feasibility of using a phase-shift full-bridge (PSFB) topology as high efficiency topology at the...
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999Power ComponentsSilicon-Carbide MOSFET Buck-Boost Evaluation Kit
The purpose of Cree‘s KIT-CRD-3DD12P, Buck-Boost Evaluation Kit is to demonstrate the high-speed switching performance of Cree’s 3rd Generation (C3MTM) silicon carbide...
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938Power SuppliesFinepower Packs 3kW GaN-Based On-Board Charger into One Liter
Conventional on-board chargers (OBCs) for electric cars are now reaching their performance and space limits. Finepower is aiming to set new standards...
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700Automotive ElectronicsZF and Danfoss Seal Strategic Partnership on Si and SiC Power for Electric Drivelines
ZF Friedrichshafen AG and Danfoss Silicon Power GmbH have stepped up their existing cooperation with a new strategic partnership for silicon and...
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1.0KPower SuppliesNavitas GaN Power IC Enables Credit-Card-Size 100W Charger
HYPER by Sanho Corporation announced HyperJuice: the world’s first 100W GaN (Gallium Nitride) charger. HyperJuice supports worldwide universal 100- to 240-Vac voltage...
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481Power ComponentsGTAT ISO-9001:2015 Certification for Silicon Carbide
GTAT Corporation has achieved ISO-9001:2015 certification through auditors TÜV Rheinland of North America, a globally renowned third-party testing, inspection and certification company....
