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Material Developments
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407Power ComponentsX-FAB Expands its SiC Capacity and Adds In-House Epitaxy Capabilities
X-FAB Silicon Foundries SE continues to drive the adoption of silicon-carbide (SiC) technology forward by offering SiC foundry services at the scale...
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490Components4-A / 6-A, Isolated Dual-Channel Gate Driver for SiC and Si Power Switches
The AEC-Q100-qualified UCC21320-Q1 from Texas Instruments is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed...
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416Power ComponentsAlScN – Alternative Material for More Efficient Smartphone Hardware
The ever-growing mobile data transfers in the wake of 5G require the use of more and higher frequency ranges, all of which...
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353Power SuppliesGaN Chip Enables Smallest 100W and 65W 4-Port Chargers
CHARGIC aims to set a new standard for mobile device charging with the release of the smallest, multi-device, fast-charging 100W and 65W...
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306Power ComponentsGTAT and ON Semi Pen 5-Year SiC Supply Agreement
GT Advanced Technologies (GTAT) and ON Semiconductor announced the execution of a five-year agreement, valued at a potential of $50 million. With...
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700Automotive Electronics100kW Inverter with 800V Power Bus and GaN Power Switches – Reference Design
VisIC Technologies Ltd. today claimed a breakthrough using GaN for 800V power-bus motor inverter that can be used for a cost-effective EV...
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785Power SuppliesTransphorm’s GaN Used in HZZH’s 98 Percent Efficient 3kW Power Module
Transphorm Inc. confirmed that Hangzhou Zhongheng Electric Co., Ltd (HZZH) has developed an ultra-efficient, GaN-based power module. The 3kW ZHR483KS uses Transphorm’s...
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384Packaging and CoolingRoom-Temperature Bonded Interface Improves Cooling of GaN Devices
A room-temperature bonding technique for integrating wide bandgap materials such as gallium nitride (GaN) with thermally conducting materials such as diamond could...
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572ComponentsEPC Announces 80V / 12.5A Half-Bridge GaN Power IC and Dev Board
Efficient Power Conversion (EPC) announces the introduction of an 80V, 12.5A ePower™ stage integrated circuit designed for 48V dc-dc conversion used in...
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387Power ComponentsOdyssey Semiconductor Names Alex Behfar as Executive Chairman and Acting CEO
Odyssey Semiconductor, Inc., a semiconductor device company developing innovative high-voltage power switching components and systems based on proprietary gallium nitride (GaN) processing...
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612ComponentsMicrochip Adds 700V, 1200V, 1700V SiC Modules Plus 30kW PFC Dev Board
Demand continues to rapidly grow for Silicon Carbide (SiC)-based systems to maximize efficiency and reduce size and weight, allowing engineers to create...
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418Power ComponentsCompound Semiconductor Centre Gets £36.7 Million to Drive Electric Transport
The Compound Semiconductor Centre (CSC), a joint venture between Cardiff University and advanced materials firm IQE, is to participate in a £36.7m...
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473ComponentsPower Integrations Adds 750V GaN Transistors to InnoSwitch3 ICs
Power Integrations announced an expansion of its InnoSwitch™3 families of offline CV/CC flyback switcher ICs. The new INN3x78C devices incorporate a smaller...
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515ComponentsON Semi Adds 900V and 1200V Silicon Carbide FETs for Demanding Applications
ON Semiconductor has expanded their range of wide bandgap devices with the introduction of two additional families of SiC MOSFETs. Intended for...
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435ComponentsUltra-High CMTI Isolated Gate Drivers for SiC or GaN FETs
The MAX22700-MAX22702 from Maxim Integrated Products are a family of single-channel isolated gate drivers with ultra-high common-mode transient immunity (CMTI) of 300kV/μs...
