EPC Announces 80V / 12.5A Half-Bridge GaN Power IC and Dev Board
Efficient Power Conversion (EPC) announces the introduction of an 80V, 12.5A ePower™ stage integrated circuit designed for 48V dc-dc conversion used in high-density computing applications and in motor drives for e-mobility. The EPC2152 is a single-chip driver plus eGaN® FET half-bridge power stage using EPC's proprietary GaN IC technology.
Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip. This results in a chip-scale LGA form factor device that measures only 3.9mm x 2.6mm x 0.63mm.
When operated in a 48V to 12V buck converter at 1MHz switching frequency, the EPC2152 ePower Stage achieves a peak efficiency above 96% with a solution that is 33% smaller in size on the printed circuit board (PCB) compared to an equivalent multi-chip discrete implementation.
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The EPC2152 is the first offering in what will be a wide-range family of integrated power stages available in chip scale package (CSP) as well as multi-chip quad flat modules (QFM). Within a year the family will fill out with products capable of operating at high frequency up to 3- to 5-MHz range as well as high current from 15A to 30A per power stage.
EPC2152 ePower Stage block diagram
Summary of Features
- Separate and independent high side and low side control inputs
- Input signal compatible with 3.3V CMOS logic or 15V analog controller
- 1ns switching time at output node
- Robust level shifter operating from negative transient conditions
- False trigger immunity greater than 100 V/ns at output node
- Undervoltage lockout for high side and low side power supplies
This family of products makes it easy for designers to take advantage of the significant performance improvements made possible with GaN technology. Integrated devices in a single chip are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.
"Discrete power transistors are entering their final chapter. Integrated GaN-on-Silicon offers higher performance in a smaller footprint with significantly reduced engineering required," said Alex Lidow, CEO and co-founder of EPC. "This new family of integrated power stages is the next significant stage in the evolution of GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers"
Development Board
EPC90120 dev board
The EPC90120 development board is an 80V maximum device voltage, 12.5A maximum output current, half bridge featuring the EPC2152 Integrated ePower Stage. This 2" x 2" (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2152 Integrated ePower Stage.
Price and Availability
The EPC2152 ePower Stage is priced at $5.03 each in 1Ku volumes.
The EPC90120 development board is price at $123.75 each.
The EPC2152 and EPC90120 are available for immediate delivery from Digi-Key
