Components

4-A / 6-A, Isolated Dual-Channel Gate Driver for SiC and Si Power Switches

The AEC-Q100-qualified UCC21320-Q1 from Texas Instruments is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive power silicon MOSFETs, IGBTs, and silicon carbide MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

Applications are expected to include: HEV and BEV battery chargers; Isolated dc-dc converters and ac-dc power supplies; Motor drives; Solar inverters; and Uninterruptible power supplies.

The input side is isolated from the two output drivers by a 3.75-kVRMS basic isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500Vdc.

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Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low.

Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC21320-Q1 enables high efficiency, high power density, and robustness.

Summary of Features

  • 4-A peak source, 6-A peak sink output
  • 3-V to 18-V input VCCI range to interface with both digital and analog controllers
  • Up to 25-V VDD output drive supply
  • Switching parameters:
    • 19-ns typical propagation delay
    • 10-ns minimum pulse width
    • 5-ns maximum delay matching
    • 6-ns maximum pulse-width distortion
  • Common-mode transient immunity (CMTI) greater than 100V/ns
  • Universal: dual low-side, dual high-side or half-bridge driver
  • Programmable overlap and dead time
  • Wide Body SOIC-14 (DWK) Package
    • 3mm spacing between driver channels
  • Operating temperature range -40 to +125°C
  • Surge immunity up to 12.8kV
  • Isolation barrier life >40 years
  • TTL and CMOS compatible inputs
  • Rejects input pulses and noise transients shorter than 5 ns
  • Fast disable for power sequencing
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • Device CDM ESD classification level C6
Texas Instruments Incorporated
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