Arralis announced the launch of its new Leonis series GaN-SiC High Power Amplifier (HPA) optimized for satellite downlink communication. The HPA operates...
BorgWarner introduces its Onboard Battery Charger (OBC), adding to the company’s portfolio of technologies for plug-in hybrid and pure-electric vehicles. The OBC...
Core material is vital when it comes to electromagnetic performance. TT Electronics has developed line of GaN-ready magnetics supporting GaN-based power converter...
It is the double helix, with its stable and flexible structure of genetic information, that made life on Earth possible in the...
The new Keithley Series 2470 SourceMeter® SMU Instrument from Tektronix is built to take engineers over the hurdles posed by SiC, GaN...
Cree, Inc. reported that it has concluded the sale of its Lighting Products business unit, Cree Lighting, to Ideal Industries, Inc. The...
Collaborating scientists at Princeton University, the U.S. Department of Energy’s Ames Laboratory, and Brookhaven National Laboratory have identified a new layered ferromagnetic...
Soitec announced that it has entered into a definitive agreement to acquire EpiGaN, a European supplier of GaN epitaxial wafer materials. The...
Qorvo® reported financial results for the company’s fiscal 2019 fourth quarter, ended March 30, 2019. On a GAAP basis, revenue for Qorvo’s...
VisIC Technologies during this week’s PCIM Europe demonstrated its 6 x V22N65A half bridge paralleling development platform. 600 Ampere peak current at...
Energy Secretary Rick Perry announced that the U.S. Department of Energy is offering $89 million in funding to support innovative, advanced manufacturing...
ROHM Semiconductor today announced the availability of the BM2SCQ12xT-LBZ series of ac-dc converter ICs with a built-in 1700V SiC MOSFET. This series...
At PCIM 2019, imec demonstrated a functional GaN half-bridge monolithically-integrated with drivers. Mounted on a buck-converter test board, the chip converts an...
Infineon Technologies AG entered high-volume production of a comprehensive portfolio of 1200V CoolSiC™ MOSFET devices. They are rated from 30mΩ to 350mΩ...
Exagan has opened a new Power Solutions Center in Toulouse, France. The company intends to use the new Power Solutions Center to...