Power Components

Exagan Opens Power Solutions Center

Exagan has opened a new Power Solutions Center in Toulouse, France. The company intends to use the new Power Solutions Center to extend the company’s applications support and market reach in wide-ranging, customer-specific end products. The opening of the facility, which is operating in close collaboration with technology partner CEA Tech, follows the launch of Exagan’s first GaN applications center in Taiwan last October.

The Toulouse facility gives customers new application-development and product-validation capabilities using highly specialized electronic equipment. It also enables Exagan to design new architectures for GaN solutions while boosting power-conversion efficiencies in current topologies.

The company says that Toulouse offers a favorable environment for developing and testing its high-reliability devices tailored for the automotive, industrial and aeronautics industries. Exagan also noted that the French city, known internationally for its role in developing the Airbus industry and the AESE Aerospace Cluster, is also home to a robust automotive ecosystem with over 190 companies, including 80 specialists.

With its fab-lite business model, Exagan says it offers complete control of GaN technology integration from starting materials to full implementation in end products, thereby enabling product optimization and volume manufacturing. (See image of unique vertically integrated business model below).

(Click on image to enlarge)

Exagan is presenting its versatile GaN-based product portfolio at PCIM Europe conference in Germany this week. The company is showing the performance of its G-FET™ power transistors in applications including power factor correction (PFC) ranging from 300W up to 1.5kW for next-generation data centers and 65-watt USB PD 3.0 power chargers.

Exagan designed its technology and products to give customers the best value in device robustness, performance, and ease of integration with existing platforms. The company notes that its G-FET power transistors can be fabricated in existing 200mm CMOS wafer fabs, enabling a multi-source supply and easy scalability, as well as optimal cost/performance advantages.

The company’s product portfolio covers a broad range of power levels and applications, from fast-charging stations for electric vehicles, data centers and on-board automotive chargers down to small fast-charging systems.

“Building on a robust GaN technology and product portfolio, Exagan is now deploying GaN Power Solutions Centers in Europe and Asia to work closely with customers. Our goal is to deliver the best functionality and value by optimizing GaN devices’ industry-leading balance of power density, power efficiency, reliability and system costs,” said Frédéric Dupont, president and CEO of Exagan.

Exagan invites PCIM Europe attendees to visit the company at booth #637, Hall 9 to see the its G-FET power transistors, G-DRIVE™ intelligent system-in-a-package (SiP) solutions, and evaluation modules.

Exagan
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