PowerPulse.net
Material Developments
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2.7KComponents2.5kW GaN-Based Half-Bridge Evaluation Board
The TDHBG2500P100 half-bridge evaluation board from Transphorm provides the elements of a simple buck or boost converter for basic study of switching...
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770Power ComponentsCree Reports FY2018 Financial Momentum Driven by Wolfspeed
Cree, Inc. today announced revenue of $409 million for its fourth quarter of fiscal 2018, ended June 24, 2018. This represents a...
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908Wireless PowerPowerSphyr and GaN Systems Collaborate on Wireless Charging
PowerSphyr, an innovator in wireless charging, and GaN Systems today announced a strategic agreement to bring state-of-the-art GaN-based wireless power systems to...
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764Power ComponentsPowerAmerica Seeking Help Accelerate GaN and SiC Adoption
The PowerAmerica Institute at N.C. State University, a member of Manufacturing USA, is seeking public input (RFI) on initiatives to accelerate the...
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1.3KPower ComponentsTripling the Output Power of GaN HEMTs Extends Radar Range 2.3X
Fujitsu Limited and Fujitsu Laboratories Ltd. announced that they have developed a crystal structure that both increases current and voltage in gallium-nitride...
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2.0KPower Components$2 Million US ARL Grant to Make 10kV to 15kV SiC MOSFETs
State University of New York (SUNY) Polytechnic Institute says that associate professor of nanoengineering Dr Woongje Sung has been selected to receive...
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502Power ComponentsNASA Studies Space Applications for GaN Crystals
Two NASA teams are examining the use of gallium nitride, a crystal-type semiconductor compound first discovered in the 1980s, and currently used...
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576Power ComponentsPowerAmerica Funds New Projects to Advance Wide Bandgap Technology
The PowerAmerica Institute at N.C. State University, a member of Manufacturing USA, recently awarded funding to six new member projects that will...
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941Power ComponentsKyma Working with IEMN to Reduce Leakage Currents in HV GaN-on-Si HEMTs
Kyma is pleased to be acknowledged for helping scientists at The Institute of Electronics, Microelectronics and Nanotechnology (IEMN) in France to realize...
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1.2KComponentsGalvanic-Isolated Gate Driver Controls and Protects SiC or Si Power Transistors
With 26V maximum gate-drive output voltage and optional separate turn-on/turn-off outputs or integrated active Miller clamp, STMicroelectronics‘ STGAP2S single-channel galvanic isolated gate...
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1.1KComponentsSiC Power Devices are First to Meet Automotive AEC-Q101 Standards
Wolfspeed, A Cree Company and leader in silicon carbide (SiC) power products, announces E-Series™, a new family of robust SiC semiconductor devices...
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1.3KPower Components9kW GaN Half-Bridge Eval Board without Paralleling
VisIC Technologies has announced a new water-cooled V22N65A-HBEVB half-bridge evaluation board to demonstrate the high-power performance achievable using its GaN All-Switches™ (Advanced...
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1.2KPower ComponentsNexGen to make Vertical GaN FETs with AIXTRON MOCVD Technology
AIXTRON SE will provide high-end MOCVD technology to NexGen Power Systems Inc. for the continued development of GaN-based electronic devices enabling more...
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1.3KAutomotive ElectronicsPlatform for Automotive Traction Inverters can use Si or SiC Devices
Developments within automotive technology are ever more centered around the electrification of the drivetrain and demand for high quality IGBT and silicon...
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836Power ComponentsReliability Methods and Standards for WBG Device Production Testing
Reedholm Systems announces, effective immediately, that the Company has formally engaged with The Piner Research Group (located on the Texas State University...
