PowerPulse.net
Material Developments
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895Batteries and Portable Power150W GaN-Based AC-DC Reference Design Over 95% Efficient
Navitas Semiconductor announced the availability of a 150W ac-dc reference design utilizing the company’s industry-leading GaN power ICs. At over 21 W/in3...
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702Communications Power200V GaN Power Transistor is 12x Smaller Than MOSFETs
Efficient Power Conversion Corp. (EPC) has announced the EPC2046 power transistor for use in applications including wireless power, multi-level ac-dc power supplies,...
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586Communications PowerGaN + Digital Power in Next-gen Envelope-Tracking LTE PA
Mitsubishi Electric Corporation, Nokia Bell Labs and the Center for Wireless Communications at UC San Diego announced their joint development of the...
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664Communications PowerIsolated Gate Drivers Deliver Solutions for GaN and SiC
Analog Devices, Inc. (ADI) today announced small form factor isolated gate drivers designed for the higher switching speeds and system size constraints...
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751Energy EfficiencyGaN 3kW Bridgeless-Totem-Pole PFC Achieves 99% Efficiency
Achieving efficiencies greater than 98% in conventional Power Factor Correction (PFC) circuits is challenging. The major hurdle is fixed diode bridge losses....
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407European Power NewsDuPont and SBE Collaborate on High-Temp Caps for SiC Designs
DuPont Teijin Films (DTF) and SBE Inc. announced a joint collaboration to bring the power electronics industry a new level of dc...
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469Energy EfficiencyX-FAB and Exagan Fab GaN-on-Si Devices on 200-mm Wafers
X-FAB Silicon Foundries and Exagan have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s...
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386Automotive Electronics1200V SiC Diodes Deliver Superior Efficiency and Robustness
A full range of 2A to 40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes from STMicroelectronics enables a wider range of...
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345European Power NewsDTF and SBE Partner on High-Temp DC Link Caps for WBG Semis
DuPont Teijin Films and SBE Inc. announced collaboration to bring the power electronics industry a new level of dc link performance, high...
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Automotive Electronics
Cree Reports Impact of Wolfspeed / Infineon Agreement Termination
Cree, Inc. announced financial results for its third quarter of fiscal 2017, ended March 26, 2017, which results include the Company’s Wolfspeed segment being reported as part of the Company’s continuing operations. While the sale of Wolfspeed to Infineon Technologies AG was targeted to close during the quarter, the agreement was formally terminated on March […]
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623Energy EfficiencyGaN Transistors Enable Personalized Energy Systems
GaN Systems‘ gallium nitride (GaN) transistors are being used by power inverter design engineers to increase power efficiency, and to reduce inverter...
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664Energy EfficiencyMultilevel GaN Converter from AT&S and Fraunhofer
Fraunhofer IAF has developed a fully-integrated monolithic multilevel converter in high-voltage AlGaN/GaN-on-Si technology. The integrated inverter circuit is designed for maximum voltages...
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834Packaging and CoolingMillions of GaN Device Hours with Zero Failures
Efficient Power Conversion Corp. (EPC) announced its Phase Nine Reliability Report showing the results of a rigorous set of thermo-mechanical board level...
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1.1KCommunications PowerReliable GaN Switches for Datacenter and Telecom Power
Infineon Technologies AG has expanded its GaN power offering with 600V CoolGaN™ 70mOhm and 190mOhm devices designed specifically to maximize the performance...
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Communications Power
ADI Acquires Broadband GaAs and GaN Amplifier Tech
Analog Devices, Inc. today announced the acquisition of OneTree Microdevices, Inc., a privately-held company based in Santa Rosa, California. With the acquisition of OneTree Microdevices’ GaAs and GaN amplifier portfolio, which claims best-in-class linearity, output power and efficiency, ADI now supports the complete signal chain for next-generation cable access networks. Financial terms of the transaction […]
