PowerPulse.net
Material Developments
-
519Automotive ElectronicsPower Electronics Technology Roadmap from PEIC
As part of its mission to accelerate the growth of the U.S. power electronics industry, the Power Electronics Industry Collaborative (PEIC) recently...
-
742Automotive ElectronicsSiC Gate Driver Optimized for 62mm Modules
AgileSwitch, LLC has introduced the 62EM (62mm Electrical Master) SiC MOSFET gate driver series. The easy-to-use, plug and play driver is compatible...
-
843Communications Power1200V 75mOhm SiC FET in Low-Inductance Package
Wolfspeed, a Cree Company, has expanded its innovative C3M™ platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released...
-
335Communications PowerBulk AlN Platform for GaN High Voltage and Power
University of Notre Dame and Cornell University have claimed the first measurements on aluminum nitride/gallium nitride (AlN/GaN/AlN) quantum well (QW) field-effect transistors...
-
695Automotive ElectronicsCree Pays $12.5 Million to Terminate Wolfspeed Sale
Cree, Inc. announced that it will terminate the definitive agreement to sell its Wolfspeed Power and RF division, which includes the silicon...
-
347Energy EfficiencyHexaTech and OSRAM Announce AlN Strategic Relationship
HexaTech Inc. announced today the signing of two strategic agreements with OSRAM Opto Semiconductors GmbH, of Regensburg, Germany. The agreements include a...
-
340Energy EfficiencyLow-Leakage, Doping-Free 600V GaN HEMT Epiwafers
The latest generation of ALLOS Semiconductors‘ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying this technology ALLOS recently concluded...
-
507Energy EfficiencyGaNonCMOS Project Aims for GaN Commercialization
The Horizon 2020 EU Research and Innovation Program called GaNonCMOS has been launched. In the next 4 years this consortium will develop...
-
362Energy EfficiencySiC Computer Chips for Longer Venus Surface Missions
A team of scientists at NASA’s Glenn Research Center in Cleveland recently completed an SiC technology demonstration that could enable new scientific...
-
291Energy EfficiencyNY-PEMC Fabs Initial 150mm SiC-Based Patterned Wafers
The New York Power Electronics Manufacturing Consortium (NY-PEMC) at SUNY Polytechnic Institute‘s (SUNY Poly) Albany NanoTech Complex announced today that it has...
-
359Communications Power£4.3 Million for GaN-on-Diamond Microwave Power
The University of Bristol has been awarded a £4.3 million grant from the Engineering and Physical Sciences Research Council (EPSRC) to lead...
-
699Automotive ElectronicsMotor Control for SiC Drives Embedded in Automotive MCUs
Renesas Electronics today announced the development of a circuit technology dedicated for motor control that realizes green vehicles satisfying stricter automotive CO2...
-
740Automotive Electronics650V GaN Power ICs get Production Qualification
Navitas Semiconductor today announced the immediate availability of production qualified iDrive™ GaN Power ICs using the company’s proprietary AllGaN™ technology. The NV6131,...
-
362Communications PowerGaN Transistor Thermal RC Models Enhance SPICE Simulations
To support customers who are modeling new systems using SPICE simulations, GaN Systems has released individual computer models for each of their...
-
452Energy Efficiency£13 Million EU Funding Boost for Compound Semis
A £13m EU funding boost to help put Cardiff University’s Institute for Compound Semiconductors at the forefront of 21st Century technologies has...
