PowerPulse.net
Material Developments
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478Components1200V SiC Schottkys Designed to Endure High-Pollution Environments
Wolfspeed, a Cree Company, has expanded its C4D family of 1200V SiC Schottky diodes to introduce three new products in a TO-247-2...
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613Power ComponentsNavitas Showcases GaNFast™ Power ICs at APEC 2018
Navitas Semiconductor announced that the company will demonstrate its leading GaN power IC technology at the Applied Power Electronics Conference (APEC) March...
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760Power ComponentsInfineon to Highlight GaN, SiC and Si Power Electronics Portfolio
Power semiconductor technologies based on advanced GaN, SiC and Si will share the spotlight in the Infineon Technologies AG exhibit at the...
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673Power ComponentsEPC to Showcase GaN FETs and ICs in End Products at APEC
The Efficient Power Conversion (EPC) team will be delivering seven technical presentations on gallium-nitride (GaN) technology and applications at APEC 2018 in...
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593Power ComponentsDemonstrating How GaN has Transformed Power Conversion Products
GaN Systems today announced its comprehensive lineup for the Applied Power Electronics Conference & Exposition (APEC) conference in San Antonio, Texas being...
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848ComponentsGaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz
Integra Technologies has released a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power...
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607Power ComponentsMACOM and STMicro Bringing GaN-on-Silicon to Mainstream RF Markets
MACOM Technology Solutions Holdings, Inc. and STMicroelectronics announced an agreement to develop GaN-on-Silicon wafers to be manufactured by ST for MACOM’s use...
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476Power ComponentsGallium-Oxide may Produce Cheaper and Smaller Devices Compared with Silicon
Silicon has long been the go-to material in the world of microelectronics and semiconductor technology. But silicon still faces limitations, particularly with...
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1.2KComponentsRenesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die
Renesas Electronics today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs...
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1.6KComponents1200V GaN-based Power Modules from VisIC and TSMC
VisIC Technologies is now sampling the industry’s first 1200V GaN modules, and is announcing a major manufacturing partnership with TSMC on their...
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1.3KComponentsOver 1400V Breakdown on new GaN-on-Si Epiwafer Product
The latest results from IEMN show more than 1400V breakdown voltage for both vertical and lateral measurements on ALLOS' upcoming GaN-on-Si epiwafer...
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509Power ComponentsAkash Raises $3.1 Million for GaN-on-Diamond Technology
Akash Systems, Inc., focused on resolving the explosive growth of data consumption by enabling smarter and lighter satellite systems, has raised $3.1...
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8.1KPower Components6.5kV Full-SiC Power Module Claims World’s Highest Power Density
Mitsubishi Electric Corporation announced today that it has developed a 6.5kV full silicon carbide (SiC) power semiconductor module that is believed to...
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1.9KPower SuppliesGaN Enables Compact 1kW Isolated Bidirectional DC-DCs
Diamond Electric Mfg. Co., Ltd. has developed a business card-sized, thin isolated bidirectional dc-dc converter (IBDC). The technology can substantially downsize and...
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764Power ComponentsPorous SiC for Advanced Sensors and Supercapacitors
Extremely fine porous structures with tiny holes – resembling a kind of sponge at nano level – can be generated in semiconductors....
