Diamonds also have remarkable properties that could make them near-ideal semiconductors. This is welcome news for electronics; semiconductors are needed to meet the rising demand for more efficient electronics that deliver and convert power. The thirst for electronics is unlikely to cease and almost every appliance or device requires a suite of electronics that transfer, […]
Earlier this month, Evince Technology closed the first half of a new round of equity investment by Business Angels. Together with a...
Intersil Corporation today announced plans to extend its market leading radiation tolerant portfolio to include Gallium Nitride (GaN) power conversion ICs for...
Richardson RFPD, Inc. today announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range of gallium nitride high-power transistors for consumer, enterprise, industrial, solar/wind/smartgrid, and transportation power-conversion applications. "GaN Systems […]
MACOM Technology Solutions Inc. announced its new MAGe-102425-300, a 300 W GaN on Silicon rugged power transistor in cost effective plastic packaging...
Ascatron AB has received A-round financing for the development of its first SiC products. The total of €4m consists of €3m in...
Richardson Electronics, Ltd. announced today a new franchise agreement with Global Power Technologies Group, a full-service manufacturer of low-cost, silicon carbide (SiC)...
STMicroelectronics has announced high-efficiency power semiconductors for Hybrid and Electric Vehicles (EVs) with a timetable for qualification to the automotive quality standard AEC-Q101. The company is fabricating SiC MOSFETs and diodes on 4-inch wafers. In order to drive down the manufacturing costs, improve the quality, and deliver the large volumes demanded by the auto industry, […]
Imec announced a strategic partnership for GaN-on-silicon technology with the Cardiff, UK-based wafer products and services firm IQE. The partnership builds on...
Infineon Technologies AG has unveiled what is claimed to be a revolutionary silicon carbide (SiC) MOSFET technology allowing product designs to achieve...
To meet the tough requirements of the next generation of MOSFETs, RECOM has recently introduced two new 2W dc-dc converter series especially...
Efficient Power Conversion Corporation (EPC) has created and posted to its website six short videos presenting end-customer applications using eGaN® FETs and...
Texas Instruments (TI) today announced the availability of 600-V GaN FET power-stage engineering samples. The new 12-A LMG3410 power stage coupled with...
Momentive Performance Materials Inc. (Momentive) will feature a portfolio of new products that facilitate critical heat removal for use in a wide range of applications at the International Microwave Symposium, May 23-27 in San Francisco, CA (Booth 718). The latest technologies of silicon carbide (SiC) and gallium nitride (GaN) power semiconductors are enabling radio frequency […]
Aixtron SE announced that its G5+ C multi-wafer batch MOCVD platform has been qualified for the manufacturing of specific buffer layers as...