PowerPulse.net
Material Developments
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1.3KCommunications Power59-mOhm 1200V SiC MOSFET Rated for 65 Amps
As a result of the very small RDS(on) variation even at high temperatures (at 200 degrees C it’s only 30% higher than...
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961Power ComponentsHigh-Isolation SiC Gate Drivers
The IG120-20 dc-dc converter recently-introduced by MicroPower Direct is designed to be used in the driver circuits for silicon carbide (SiC) MOSFETs....
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Energy Efficiency
e2v and GaN Systems Sign Master Supply Agreement for A&D Markets
A master supply agreement between e2v, the global leader in the high-reliability semiconductor market, and GaN Systems establishes e2v as the global supplier of GaN Systems’ 100V and 650V hi-rel GaN transistor products and customer care for the Aerospace and Defense (A&D) market. e2v will utilize its infrastructure and 30 years of experience in this […]
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1.8KEnergy EfficiencyFull SiC 1500V PV Inverters are 99% Efficient
GE has unveiled its LV5+ 1500V PV inverters which are the first multi-MW utility-scale inverters based completely on SiC power electronics. Other...
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988Communications PowerHighest Power L-Band Radar GaN HEMT
Wolfspeed, A Cree Company will release the highest power 50V GaN HEMT demonstrated to date - its 900W (typical) CGHV14800 GaN HEMT...
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841Components1200V / 0.04Ω GaN Switches with integral ISO-DRIVER
VisIC Technologies announced a new family of high-voltage GaN devices for switching power electronics designs. With 1200V ratings, the GaN module have...
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1.2KBatteries and Portable PowerSiC Reduces Size of Railroad Battery Charger by 10X
At the upcoming trade show InnoTrans in Berlin, Germany, September 20 to 23, ABB will launch a next generation battery charger based...
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611Motion Control6-Watt DC-DCs for IGBT, SiC, and MOSFET Gate Drives
Murata has announced an extension to their MGJ6 series of isolated 6-Watt dual-output dc-dc converters from Murata Power Solutions. Optimized to suit...
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1.2KCommunications PowerGaN Enhances Efficiency of Redundant Power Supplies
Telcodium in collaboration with Transphorm Inc. has released the industry’s first redundant power supplies using GaN FETs. Telcodium’s AC Series replaces a...
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1.0KCommunications PowerSiC FETs Shrink 5kW Rack-Mounted Distributed UPS
Fuji Electric Co., Ltd. has announced that it has developed a rack-mount dc power system for data centers. The F-DCPOWER is a...
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Components
0.080-Ohm 12A / 650V GaN Switches
VisIC Technologies, Ltd. is announcing the launch of a new product, offered in a smaller package with bottom side cooling, an on resistance RDS(on) rating of 0.080Ω, and a reduced external components requirement using a simplified driving scheme. This new 650V GaN Power Switch is a member of the ALL-Switch family designed for bridge converters […]
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880Communications Power220W GaN HEMT for 2.6GHz 4G Transceivers
Mitsubishi Electric Corp. has developed a 220W-output gallium-nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74%...
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1.2KAutomotive ElectronicsEpiGaN Expanding into Asia with ACAPITAL Investment
EpiGaN announced that the Brussels/Beijing-based European private equity fund ACAPITAL has joined the initial investors in EpiGaN to fund the company’s expansion...
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867Energy EfficiencyGaN Systems’ Founders Girvan Patterson and John Roberts to Retire
Ten years after launching a GaN semiconductor company, and leading the company to a leading position in the world of GaN power...
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1.8KBatteries and Portable PowerDialog Semi Enters GaN Power IC Market
Dialog Semiconductor plc today announced and is demonstrating its first gallium nitride (GaN) power IC product offering, using Taiwan Semiconductor Manufacturing Corporation‘s...
