As a result of the very small RDS(on) variation even at high temperatures (at 200 degrees C it's only 30% higher than at 25 degrees C), the new SCT50N120 SiC MOSFET from STMicroelectronics brings increased efficiency and reliability to a broad range of energy-conscious applications such as solar inverters, high-efficiency power supplies and lighting. Housed in the proprietary HiP247â„¢ package, it also features the highest temperature rating of 200 degrees C, while maintaining compatibility with the industry-standard TO-247 package outline.
With VGS = 20V and ID = 40A the typical RDS(on) of the SCT50N120 rises from 52mΩ at 25 degrees C to 59mΩ at 150 degrees C and is 70mΩ at 200 degrees C. These SiC FETS are rated for 65A at 25 degrees C and 50A at 100 degrees C. These devices are suitable for high-efficiency and high power density applications such as solar inverters, uninterruptible power supplies, motor drives, high-voltage dc-dc converters and switch-mode power supplies.
Other features and specifications of the SCT50N120 SiC MOSFET include: Very fast and robust intrinsic body diode with a reverse recovery time of 55ns and a reverse recovery charge of 230nC; operating temperature range of -55 to +200 degrees C; input capacitance (Ciss) of 1900pF; output capacitance (Coss) of 170pF; total gate charge (Qg) of 122nC; typical turn-on switching energy at 25 degrees C of 530µJ; and typical turn-off switching energy at 25 degrees C of 310µJ.
