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Material Developments
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643European Power NewsOrganic Power Devices in Mains-Powered Converter
Organic light-emitting devices and printed electronics can be connected to a socket in the wall by way of a small, inexpensive organic...
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Automotive Electronics
Transphorm Opens Silicon Valley Center of Excellence
Transphorm Inc. formally introduced its Silicon Valley Center of Excellence today. Established over the past year, the Center is Transphorm’s customer support initiative for high-voltage-GaN-based power application development. The Center’s mission is to educate and support customers developing with high voltage GaN. The Center will also build out a technical library consisting of application notes, […]
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752Communications PowerAkash Systems to Commercialize GaN-on-Diamond Tech
With worldwide data demand outpacing the frequency, bandwidth and power capabilities of our current communications infrastructure, Felix Ejeckam and Ty Mitchell, both...
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1.3KAutomotive ElectronicsGaN FETs Extend Cost/Performance Benefits over Silicon
Efficient Power Conversion Corporation has advanced the performance capability while lowering the cost of off-the-shelf gallium-nitride transistors with the introduction of the...
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774Automotive ElectronicsROHM Joins CharIN to Contribute SiC Technology
ROHM becomes a regular member of the CharIN (Charging Interface Initiative), an association to develop and establish the Combined Charging System (CCS)...
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1.2KCommunications PowerRFHIC acquiring GaN-on-Diamond Tech from E6
RFHIC Corporation, of Anyang, South Korea has signed a deal with Element Six (E6), a member of the De Beers Group of...
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1.3KAutomotive ElectronicsMitsubishi Claims Smallest SiC Inverter for HEVs
Mitsubishi Electric Corporation announced today that it has developed a working model of an ultra-compact silicon carbide (SiC) inverter for hybrid electrical...
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1.0KEnergy EfficiencySiC Power Electronics gets GE $4.1 Million from U.S. Army
GE Aviation today announced that it has been awarded a $4.1 million contract from the U.S. Army to develop and demonstrate silicon...
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851European Power NewsGaN-on-Si Devices Show No Degradation from Irradiation
Imec reported that their 200mm gallium nitride-on-silicon (GaN-on-Si) e-mode power devices with a pGaN gate architecture demonstrated no degradation after receiving heavy...
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930ComponentsMisubishi adds 600V SiC Schottky-Barrier Diodes
Mitsubishi Electric Corporation announced the launch of a pair of 20A / 600V silicon-carbide (SiC) Schottky-barrier diodes (SiC-SBD) that incorporates a junction-barrier...
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684Communications PowerSOI Wafer is a Suitable Substrate for GaN Crystals
In cooperation with Okmetic Oy and the Polish ITME, researchers at Aalto University have studied the application of SOI (Silicon On Insulator)...
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859Communications PowerLittelfuse Owns Majority of SiC Device Maker Monolith Semi
Littelfuse, Inc. today announced it has made an incremental $15 million investment in Monolith Semiconductor Inc., a Texas-based start-up company developing silicon...
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1.1KAutomotive ElectronicsPower Electronics Technology Roadmap from PEIC
As part of its mission to accelerate the growth of the U.S. power electronics industry, the Power Electronics Industry Collaborative (PEIC) recently...
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1.5KAutomotive ElectronicsSiC Gate Driver Optimized for 62mm Modules
AgileSwitch, LLC has introduced the 62EM (62mm Electrical Master) SiC MOSFET gate driver series. The easy-to-use, plug and play driver is compatible...
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1.7KCommunications Power1200V 75mOhm SiC FET in Low-Inductance Package
Wolfspeed, a Cree Company, has expanded its innovative C3M™ platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released...
