PowerPulse.net
Material Developments
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2.3KPackaging and CoolingDanfoss Preparing for Production of SiC Power Modules in NY
Danfoss Silicon Power today welcomed the first employees to its Utica, New York facility — marking progress toward full operation of its...
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1.4KPower ComponentsWIN Enhances 0.25µm Gallium Nitride Power Process
WIN Semiconductors Corp has released an optimized version of its 0.25µm gallium nitride technology, NP25, that provides superior DC and RF transistor...
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2.9KSwitch-Mode PowerInfineon GaN Switches enable 98% Efficient 3kW AC-DCs from Eltek
The quest for improved power conversion efficiency and reduction of energy losses is always on. In close co-operation with Infineon Technologies AG,...
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1.4KPower ComponentsGaN Systems and Taiwan’s MOEA to Collaborate on GaN Commercialization
The world is challenged with unsustainable increases in power consumption, combating climate change, implementing cleantech technologies and meeting green, CO2 reduction initiatives....
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3.4KComponents1200V SiC FET Provides Ultra-Fast Switching and Enhanced Robustness
Littelfuse, Inc. today introduced its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power semiconductor line....
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1.7KPower ComponentsPPM Power Signs Power Modules and SiC Agreement with SanRex
PPM Power, specialist supplier of power electronics, high voltage and pulse power components has signed an agreement with Japanese manufacturer SanRex to...
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2.3KPower SuppliesIndustrial ATX Power with Digital Control, SiC Rectifiers and Remote Monitoring
Nipron has added the HPCSA-700P, 700W (peak) high efficiency ATX power supply unit with the maximum efficiency of 89%. Compared with Nipron's...
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1.1KPower ComponentsDr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research
Honda Foundation announced that the Honda Prize 2017 will be awarded to Dr. Hiroyuki Matsunami, Professor Emeritus, Kyoto University who has made...
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5.2KComponentsSixth-Generation 650V SiC Schottky Diodes have Faster Switching
Infineon Technologies AG has introduced the CoolSiC™ Schottky diode 650V G6. This latest development in the CoolSiC diode family is built upon...
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3.7KPower ComponentsMitsubishi Develops SiC Power Device with Record Power Efficiency
Mitsubishi Electric Corporation has developed a silicon carbide (SiC) power device with what is believed to be the world’s highest power efficiency...
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2.3KMotion ControlGaN FETs enable Reimagining Servos through Redesigned Power Electronics
Transphorm Inc. along with Yaskawa Electric Corporation announced that Yaskawa’s Σ-7 F is the first servo motor to use high-voltage (HV) GaN....
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2.3KBatteries and Portable PowerGaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter
Navitas Semiconductor today announced the world’s smallest 65W USB-PD (Type C) adapter reference design, to keep pace with the dramatic size and...
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1.7KPower SuppliesIsolated DC-DCs Optimized for Fast-Switching GaN Drivers
GaN devices are set to supersede existing IGBTs and MOSFETs in many applications, offering superior performance, lower losses and higher switching speeds....
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3.2KPower ComponentsAscatron enters SiC Power Device Market with Diodes up to 10kV
Ascatron now offers next-generation Silicon Carbide (SiC) power semiconductors using its proprietary 3DSiC® technology with a quality and performance unattainable through current...
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1.6KPower ComponentsSDK to Expand Capacity for High-Grade SiC Epitaxial Wafers
Showa Denko (SDK) will increase manufacturing capacity for its high-quality-grade silicon carbide (SiC) epitaxial wafer for power devices from the current 3,000...
