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Material Developments
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2.4KComponentsOver 1400V Breakdown on new GaN-on-Si Epiwafer Product
The latest results from IEMN show more than 1400V breakdown voltage for both vertical and lateral measurements on ALLOS' upcoming GaN-on-Si epiwafer...
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1.1KPower ComponentsAkash Raises $3.1 Million for GaN-on-Diamond Technology
Akash Systems, Inc., focused on resolving the explosive growth of data consumption by enabling smarter and lighter satellite systems, has raised $3.1...
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10.9KPower Components6.5kV Full-SiC Power Module Claims World’s Highest Power Density
Mitsubishi Electric Corporation announced today that it has developed a 6.5kV full silicon carbide (SiC) power semiconductor module that is believed to...
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3.8KPower SuppliesGaN Enables Compact 1kW Isolated Bidirectional DC-DCs
Diamond Electric Mfg. Co., Ltd. has developed a business card-sized, thin isolated bidirectional dc-dc converter (IBDC). The technology can substantially downsize and...
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1.3KPower ComponentsPorous SiC for Advanced Sensors and Supercapacitors
Extremely fine porous structures with tiny holes – resembling a kind of sponge at nano level – can be generated in semiconductors....
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1.5KPower ComponentsSDK to Re-expand Capacity for High-Grade SiC Epitaxial Wafers
Showa Denko (SDK) has re-expanded its capacity to produce high-quality-grade silicon carbide (SiC) epitaxial wafers for power devices, which have already been...
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1.4KComponents1200V SiC Schottky Diodes Rated for 8A, 15A and 20A
Littelfuse, Inc. has introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family, which was originally...
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1.6KAutomotive ElectronicsSustainable Plating offers Ultra-Low Risk of Whisker Growth
Bismuth (Bi)-based solution for press-fit plating applications can reduce the risk of whisker growth by a factor of over 1600 compared to...
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1.3KComponentsGaN enables Ultra Wide-Band Linearized Doherty Amplifier
Mitsubishi Electric US, Inc. will present a hands-on mini lab showcasing its high-efficiency, wide-band GaN Doherty Amplifier at Radio Wireless Week (RWW2018),...
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6.2KEnergy EfficiencyGaN Enables 1600W Titanium Power Supply for Gamers
Transphorm Inc. confirmed that its GaN FETs are used in CORSAIR‘s new AX1600i power supply unit (PSU). CORSAIR supplies the gaming community...
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1.3KWireless PowerGaN-Enabled Large-Area Wireless Power and High-Resolution LiDAR
Efficient Power Conversion (EPC) will be demonstrating the power of eGaN® technology to enhance two game-changing consumer applications – wireless power and...
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2.3KPower ComponentsGallium-Oxide Power Semis are Goal of DENSO / FLOSFIA Partnership
DENSO Corporation, one of the world’s largest automotive suppliers, and FLOSFIA Inc., a tech startup spun from Kyoto University, are partnering to...
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3.7KPower SuppliesHalf-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices
RECOM‘s universal half-bridge reference design can be used to evaluate high power IGBT, 1st and 2nd gen. SiC, GaN and MOSFET Cascode...
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1.5KStandardsJEDEC Committee for WBG Power Semis Invites Industry Participation
JEDEC Solid State Technology Association announced the successful launch of its newest committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors. JC-70 held...
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1.4KComponents40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS
Efficient Power Conversion Corp. (EPC) has announced the EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope...
