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Material Developments
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3.4KPower ComponentsGaN Testing Success Beyond 10X of JEDEC Requirements
GaN Systems announced it has surpassed 10,000 hours of qualification testing for its GaN E-HEMT devices. This is 10X the 1,000-hour requirement...
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3.6KComponentseGaN ICs Combining Gate Drivers with High Frequency GaN FETs
Efficient Power Conversion Corporation (EPC) has announced the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112...
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1.4KComponentsCapacitors for Fast-Switching Wide Bandgap Semiconductor Applications
KEMET has launched KC-LINK surface mount capacitors at APEC 2018 in San Antonio. KC-LINK is designed to meet the growing demand for...
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1.4KComponentsRecord-Setting 100 V/120A GaN Power Transistor
GaN Systems unveiled the industry’s highest current and power efficient 100V GaN power transistor, the 100V, 120A, 5mΩ GaN E-HEMT device [GS-010-120-1-T]....
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1.3KComponents1200V SiC MOSFETs with Ultra-Low On-Resistances at APEC 2018
Littelfuse, Inc. and Monolith Semiconductor Inc. have added two 1200V silicon carbide (SiC) n-channel, enhancement-mode MOSFETs to their expanding first-generation portfolio of...
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1.1KSwitch-Mode PowerTeledyne e2v, pSemi and GaN Systems Unveil Hi-Rel GaN Power Solution
Teledyne e2v is launching a complete GaN power solution based on technology from pSemi (formerly Peregrine Semiconductor) and GaN Systems. The solution...
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1.5KComponentsTI expands GaN Power Portfolio with Smallest and Fastest GaN Drivers
Texas Instruments (TI) today announced two new high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications...
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2.1KCommunications PowerGaN-Based 48V to 12V Regulated Power Supply Dev Board Delivers >1250 W/in3
Efficient Power Conversion Corporation (EPC) has introduced the EPC9130 48 V − 12 V non-isolated, fully-regulated development board. This five-phase board with...
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1.4KComponents650V SiC FETs Offer Drop-in Replacement for Si Superjunction FETs
UnitedSiC has announced the UJ3C series of 650 V SiC FETs as drop-in replacements for silicon Superjunction MOSFETs. Available in standard TO-220,...
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3.5KBatteries and Portable PowerGaN Power ICs Deliver 45W Travel Adapter in 14mm Profile
Navitas Semiconductor today announced that GaNFast™ power ICs enable the ‘Mu One', a universal 45W power adaptor with an unprecedented 14mm ultra-slim...
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2.7KComponentsChip Set Cuts AC-DC Power Supply and Charger Sizes in Half, Ups Efficiency
Texas Instruments (TI) today introduced several new power management chips that enable designers to boost efficiency and shrink power-supply and charger solution...
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931Components650V SiC Schottkys Feature Superior Switching Performance and Higher Reliability
ON Semiconductor has extended its SiC diode portfolio by introducing its newest family of 650V SiC Schottky diodes. The diodes' cutting edge,...
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6.4KComponents120A / 650V GaN Power Transistor Can Double Power Conversion Density
GaN Systems today made public the 120A, 650V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance...
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6.3KComponents1200V SiC MOSFETs and SiC SBDs for Industrial and Automotive Designs
Microsemi Corporation today announced sampling availability of the first product in its next-generation 1200-V SiC MOSFETs, the 40-mOhm MSC040SMA120B. The company also...
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3.0KSwitch-Mode Power100V GaN Transistor in High-Performance Buck Converter Evaluation Board
GaN Systems today announced the availability of its 5MHz buck converter evaluation board (GS61008P-EVBHF) using GaN Systems’ 100V E-Mode GaN transistor and...
