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Material Developments
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2.1KPower ComponentsSingle-Crystal Diamond Diodes under Development at Advent Diamond
Advent Diamond has been awarded a National Science Foundation (NSF) Small Business Innovation Research (SBIR) grant to conduct research and development work...
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1.1KPower ComponentsGreat Expectations for GaN Power Devices in Space Applications
Panasonic‘s next-generation GaN power transistor, X-GaN™, realizes significant space and energy savings for a wide range of power electronics applications. Panasonic began...
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5.3KDigital PowerSoftware-Defined Inverter features 3-Phase GaN Power Stage
Tapas, the new inverter developed at Siemens Corporate Technology, has innumerable possible uses. It is much more universal in application than previous...
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1.6KMotion Control35% Lower Energy Consumption with SiC-Based Propulsion Technology
Bombardier Transportation celebrated the successful demonstration of a new silicon carbide (SiC)-equipped Bombardier MITRAC TC1500 traction converter during an event held at...
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2.4KPower SuppliesHigh-Power GaN Converter IMS Evaluation Platform
This Insulated Metal Substrate (IMS) evaluation platform from GaN Systems can be used to evaluate the electrical and thermal performance benefits of...
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5.3KPower Quality1.6-kW GaN-Based 1-MHz CrM Totem-Pole PFC Reference Design
High-frequency, critical-conduction-mode (CrM), totem-pole power factor correction (PFC) is a simple approach for designing high-density power solutions using GaN. This reference design...
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1.6KComponentsPIM-plus-PFC Package for up to 20A in a Flow 0 Housing
Vincotech’s flow PIM 0 + PFC modules combine deeply integrated power modules with active power correction circuits. This module is equipped with...
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1.4KPower ComponentsGaN IC Design Simulation Standards Approved
The Silicon Integration Initiative’s (Si2) Compact Model Coalition (CMC) has approved two integrated circuit design simulation standards that target the fast-growing global...
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2.2KComponents1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor
Qorvo® today claimed the world’s highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor. Operating with 1.8kW at 65 volts, the...
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2.2KPower ComponentsKyma Adds Substrates to its Gallium Oxide (β-Ga2O3) Product Line
Kyma Technologies, Inc. has launched a crystalline beta-phase gallium oxide (β-Ga2O3) substrate product line. Kyma's β-Ga2O3 Substrates are produced by slicing {010}...
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1.4KPower ComponentsRadiation Hardness Testing of Gallium-Oxide Power Devices Completed
Structured Materials Industries, Inc. (SMI) has successfully finished initial studies of the radiation hardness of Gallium Oxide (Ga2O3) based power devices in...
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5.9KSwitch-Mode Power1kV SiC FETs Enable 6.6kW Bi-Directional On-Board Charger Design
This 6.6kW bi-directional on-board charger (OBC) design targets high-efficiency, high-power-density onboard charger applications. The high voltage rating of Wolfspeed SiC MOSFETs allows...
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1.4KCommunications PowerHighly-Integrated GaN BUCS for Next Gen Portable SATCOM Terminals
Mission Microwave Technologies, LLC has announced general availability of new extremely compact Block Up Converters (BUCs) in Ku and Ka Bands for...
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12.4KPower Quality Protection3.3-kW Bridgeless Totem-pole PFC GaN Reference Design
Transphorm Inc. has released the first complete 3.3-kW continuous conduction mode (CCM) bridgeless totem-pole power factor correction (PFC) reference design for high-voltage...
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4.3KPower SuppliesGaN Power Modules Deliver Over 1400 W/in3 for 48V to 12V PoLs
Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for dc-dc conversion, increasing efficiency across the 48 V to point-of-load...
