1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

Qorvo® today claimed the world’s highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor. Operating with 1.8kW at 65 volts, the QPD1025 delivers the outstanding signal integrity and extended reach essential for L-band avionics and Identification Friend or Foe (IFF) applications.

The Qorvo QPD1025 is an 1800W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre-match within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

Roger Hall, general manager, Qorvo High Power Solutions, said, “This new high-power transistor will save customers time and money by eliminating the difficult exercise of combining amplifiers to create multi-kilowatt solutions. The QPD1025 has significantly better drain efficiency and beats LDMOS by nearly 15 percentage points of efficiency, which is significant in IFF and avionics applications.”

Key Features:

  • Frequency: 1.0 to 1.1 GHz
  • Output Power (P3dB): 1862W @ 1.0 GHz Load Pull
  • Linear Gain1: 22.5dB
  • Typical PAE3dB1: 77.2%
  • Operating Voltage: 65V
  • CW and Pulse capable

Engineering samples of the QPD1025 are available now. Lead-free and ROHS compliant Evaluation boards are available upon request.

Qorvo, Inc.
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