PowerPulse.net
Material Developments
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1.8KPower ComponentsNext-Generation SiC Transistors Claim World’s Lowest On-State Resistance
Sumitomo Electric Industries, Ltd. has developed V-groove superjunction transistors through a joint research project with the National Institute of Advanced Industrial Science...
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2.4KPower SuppliesGaN FETs Enable Military-Grade High-Frequency Power Supply
Transphorm Inc. announced with Marotta Controls that the Aerospace and Defense supplier's upcoming power supply unit (PSU) replaces incumbent Silicon (Si) MOSFETs...
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1.2KPower ComponentsCarbon-Doping Free GaN-on-Si Displays Better Dynamic R(on)
Known for causing bad dynamic on-resistance, carbon-doping is uniquely avoided by ALLOS and data available from customers now confirmed not only outstanding...
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2.5KPower SuppliesGaN Enables Small & Fast USB Wall-Mount Chargers
Aukey has announced the development of three ultra-fast GaN-based wall chargers: a 27-Watt USB-C model (PA-Y19), a 30-Watt USB-C model (PA-Y21) and...
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2.9KPower ComponentsVertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process
Researchers at National Institute of Information and Communications Technology (NICT) and Tokyo University of Agriculture and Technology (TUAT) demonstrate a vertical Ga2O3...
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1.7KPower ComponentsTransphorm Ships Over a Quarter of a Million GaN Power Devices
Transphorm Inc. disclosed that it has shipped more than 250 thousand high voltage GaN FETs. Used in customers’ mass production applications, the...
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1.2KPower ComponentsGaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR
Efficient Power Conversion (EPC) will be demonstrating the power of eGaN® technology to enhance two game-changing consumer applications - wireless power and...
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2.1KComponents28GHz GaN Front-End Module Targets 5G Rollout
Qorvo® has expanded its offering for 5G applications with the industry’s first 28 GHz GaN front-end module (FEM). This new FEM reduces...
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1.7KBatteries and Portable PowerFluoride-Ion Breakthrough Promises 10x Energy Density Compared with Lithium-Ions
The chemical element that makes up most of today’s batteries, lithium, may soon be challenged by its polar opposite on the Periodic...
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1.4KPower SuppliesGaN Enables 14mm-Thin 45W Wall Charger
RAVPower‘s flagship PD charger packs all of the benefits of USB Power Delivery (PD) technology into perhaps the thinnest charger ever made....
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1.6KPower Components650V D-Mode GaN HEMTs Produced on 200mm Gan-on-Si Wafers with CMOS-Compatible Process
IGSS GaN (IGaN), a Singapore-based specialist in GaN-on-silicon technology, and SilTerra Malaysia Sdn. Bhd., a home-grown Malaysian semiconductor wafer foundry, announced the...
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1.3KPower ComponentsNew Mechanism for Enhancing Reliability of SiC Power Devices Detailed at IEDM
Mitsubishi Electric Corporation and the University of Tokyo announced today what they believe to be an all-new mechanism for enhancing the reliability...
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1.6K2017 Holiday Gift IdeasHigh-Voltage GaN Helps Inergy Disrupt the Solar Power Generator Market
Transphorm Inc. along with solar energy innovator Inergy and design partner Telcodium Inc. announced today that the upcoming Inergy Kodiak Extreme uses...
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1.0KPower ComponentsTowerJazz and KERI Prototyping SiC FET Gate Driver IC on 0.18um SOI Platform
TowerJazz today announced Korea Electrotechnology Research Institute (KERI), a government research institute specializing in IC and system development for power and energy...
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1.5KPower ComponentsUnitedSiC Adds Kelvin Connection Packages into SiC FET Offering
UnitedSiC has expanded its UF3C FAST Series product offering by introducing an additional range of 650V and 1200V high-performance silicon carbide FETs...
