Karma Automotive has entered the final stage of development for two new silicon carbide (SiC) inverters to enhance electric mobility charging. The...
Navitas Semiconductor announced that over 50 GaNFast-enabled mobile fast-charging products and platforms are available, including top OEMs in mass-production with wall chargers...
Efficient Power Conversion (EPC) announces its Phase Eleven Reliability Report, documenting the strategy used to achieve a remarkable field reliability record of...
The IX4351NE from Littelfuse is designed specifically to drive silicon carbide MOSFETs and high power IGBTs. Separate 9A source and sink outputs...
The CRD-06600FF065N electric vehicle on-board charger (OBC) reference design from Cree uses the company’s recently-introduced C3M0060065D, 60mΩ, 650V, silicon carbide MOSFETs (TO-247)...
The EVAL-M5-IMZ120R-SIC from Infineon Technologies is a complete evaluation board including a six discrete silicon carbide CoolSiC™ MOSFETs realizing a B6 inverter...
Cree announced the expansion of its product portfolio with the release of the Wolfspeed® 650V silicon carbide MOSFETs, delivering a wider range...
First introduced at Intersolar Europe 2019, Sungrow offers the SG250HX PV string inverter that features a high capacity of 250kW. On board:...
Texas Instruments has launched a virtual trade show booth with extensive information that was originally developed for the now cancelled 2020 IEEE...
Infineon Technologies AG has expanded its CoolSiC™ Schottky diode 1200V portfolio by adding six devices in a D²PAK real 2-pin package. Using...
Mitsubishi Electric Corporation has developed a new technology to integrate power devices, passives, sensors and other embedded components in the same substrate,...
The CIO 3C1A Charger has been launched on Kickstarter by CIO LLC, a Japanese smartphone-related gadgets manufacturer based in Osaka, Japan. The...
Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have succeeded in significantly increasing the output power of their gallium-nitride...
The uP1966A from uPI Semiconductor is designed to drive both high-side and low-side GaN FETs in half bridge topologies. It integrates an...
CISSOID has announced a new 3-phase SiC MOSFET intelligent power module (IPM) platform for E-mobility. This new IPM technology offers an all-in-one...