The IX4351NE from Littelfuse is designed specifically to drive silicon carbide MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
The IX4351NE is designed for driving SiC MOSFETs and IGBTs in on-board chargers and dc charging stations, industrial inverters, power factor correction circuits, ac-dc power supplies and dc-dc converters.
Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage.
Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller.
Summary of Features
- Separate 9A peak source and sink outputs
- Operating Voltage Range: -10V to +25V
- Internal negative charge pump regulator for selectable negative gate drive bias
- Desaturation detection with soft shutdown sink driver
- TTL and CMOS compatible input
- Under Voltage lockout (UVLO)
- Thermal shutdown
- Open drain FAULT output
The IX4351NE is rated for operational temperature range of -40°C to +125°C, and is available in a thermally enhanced 16-pin power SOIC package.