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Material Developments
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1.3KMotion Control3-Phase, 1.25kW, 200Vac GaN Inverter Reference Design for Integrated Drives
The TIDA-00915 reference design from Texas Instruments is a three-phase inverter with a continuous power rating of 1.25kW at 50°C ambient and...
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1.2KComponents650V / 72mΩ GaN FETs in a PQFN88 Package
Transphorm Inc. announced its first Gen III Gallium-Nitride transistors in a PQFN88 package. The new 650V devices are available in two versions,...
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805Automotive ElectronicsFPGA-Based Inverter Modules use Custom SiC MOSFETs to Power Electric Racing Car
Formula Student is the largest engineering competition in the world. The Zurich/Switzerland based AMZ student team managed to put itself top of...
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1.3KPower Components1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board
The TDHBG1200DC100 half-bridge evaluation board from Transphorm provides the elements of a simple buck or boost converter, using the Transphorm daughter card...
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1.4KAutomotive ElectronicsDelphi and Cree Partner on 800V SiC Inverter to Cut EV Charging Time in Half
Delphi Technologies is the first in the industry with volume production of an 800V silicon carbide (SiC) inverter, one of the key...
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669Power ComponentsDuPont Electronics & Imaging Divests SiC Wafer Business to SK Siltron
DuPont Electronics & Imaging (E&I) today announced it has signed an agreement to sell its Compound Semiconductor Solutions (CSS) business to SK...
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623Power ComponentsNew Aspect of Charge Density Modulations in High Temp Superconductors Uncovered
Charge density waves are just the tip of the iceberg of the charge modulation phenomenon: charge density fluctuations are much more pervasive,...
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978Automotive ElectronicsDelphi Technologies to Partner with Cree for Automotive Silicon Carbide Devices
Delphi Technologies PLC and Cree, Inc. have announced a partnership to utilize silicon carbide semiconductor device technology to enable faster, smaller, lighter...
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1.0KAutomotive ElectronicsRenault-Nissan-Mitsubishi to use STMicro SiC for High-Speed EV Battery Charging
STMicroelectronics has been chosen to supply high-efficiency silicon-carbide (SiC) power electronics by Renault-Nissan-Mitsubishi (Alliance) for advanced on-board chargers (OBCs) in its upcoming...
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1.4KPower ComponentsInsulation Technique May Pave the Way for More Powerful and Smaller Chips
Researchers at KU Leuven and imec have successfully developed a new technique to insulate microchips. The technique uses metal-organic frameworks, a new...
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880ComponentsGaN-Based 110W LED Drivers Claim Industry-Leading Power Density and Efficiency
Power Integrations has announced new high-power-density members of its LYTSwitch™-6 family of safety-isolated LED-driver ICs for smart-lighting applications. The new ICs with...
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861Wireless PowerEPC and Solace Power Partner to Use GaN FETs in 250-W Wireless Power Platforms
Efficient Power Conversion (EPC) has announced a collaboration with Solace Power, a leading wireless power, sense and data company, to enable 250-Watt...
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622Power ComponentsNew Theory Models the Nature of Silicon-Carbide Crystal Defects
Imperfections of crystal structure, especially edge dislocations of an elongated nature, can deeply modify basic properties of the entire material and, in...
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748ComponentsTwo EasyPACK™ Modules with CoolSiC™ MOSFETs for EV Charging and UPS
Production numbers of electric vehicles (full and hybrid) are rapidly increasing. With that, the demand for energy efficient charging solutions is also...
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1.2KPower ComponentsWorld’s First Multi-Cell GaN-HEMT Bonded Directly to Diamond Substrate
Mitsubishi Electric Corporation announced today that in collaboration with the Research Center for Ubiquitous MEMS and Micro Engineering, National Institute of Advanced...
