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Material Developments
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900ComponentsMurata Unveils Transformer Technology that Supports over 400kW at 50kHz
Murata has announced a new transformer technology for high power, high frequency power conversion applications that uses a novel winding technique to...
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738Power SuppliesDual Port SiC-Based Fast Charger for Airport Ground Support Operations
Minit Charger has released their newest fast charger, Altus II. This new dual-port fast charger, built using state-of-the-art silicon carbide (SiC) technology,...
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1.0KCommunications Power100V, 5A Gallium-Nitride-Based Half-Bridge Development Board
The EPC9092 development board from Efficient Power Conversion (EPC) is a 100V maximum device voltage, 5A maximum output current, half bridge with...
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1.5KPower ComponentsIntegrated Silicon III-V Chips to be Commercially Available in 2020
The Singapore-MIT Alliance for Research and Technology (SMART), MIT’s Research Enterprise in Singapore, has announced the successful development of a commercially viable...
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866ComponentsCapacitors Optimized for Fast Switching Wide Bandgap Semiconductor Designs
Kemet Corporation announced a complete capacitance and voltage offering for the KC-LINK™ ceramic surface mount capacitors in the EIA 3640 case size. ...
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765Power ComponentsPower Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC
Power Integrations announced the delivery of its one-millionth InnoSwitch™3 switcher IC featuring the company's PowiGaN™ gallium-nitride technology. In an event at the...
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996Power ComponentsMitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure
Mitsubishi Electric Corporation announced today that it has developed a trench-type silicon-carbide (SiC) MOSFET with a unique electric-field-limiting structure for a power...
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1.1KPower ComponentsSiC to Enable 1MW Inverter in the Size of a Compact Suitcase
GE is collaborating with the NASA Advanced Air Vehicles Program (AAVP) to enable the future of flight for large commercial aircraft with...
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1.6KPower ComponentsGallium Nitride Discovery Aims for Efficient P-Type GaN Transistors
Gallium nitride, a semiconductor that revolutionized energy-efficient LED lighting, could also transform electronics and wireless communication, thanks to a discovery made by...
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1.6KAutomotive Electronics10kW Bi-Directional, Dual Active Bridge Reference Design with SiC MOSFETs
The TIDA-010054 reference design from Texas Instruments (TI) provides an overview on the implementation of a single-phase dual active bridge (DAB) dc-dc...
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937Power ComponentsII-VI Expands Compound Semi Business with Completion of Finisar Acquisition
II‐VI Incorporated (II-VI) today successfully completed the acquisition of Finisar Corporation (FNSR). The acquisition of Finisar was first announced on November 9,...
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648Power ComponentsLaser Printing Tech Produces Waterproof E-Textiles in Minutes
The next generation of waterproof smart fabrics will be laser printed and made in minutes. That's the future imagined by the researchers...
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867Power ComponentsCree to Establish SiC Corridor on the East Coast of the United States
Cree, Inc. today announced plans to establish a silicon carbide (SiC) corridor on the East Coast of the United States with the...
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568Power ComponentsPhysicists Find Evidence of the Mechanism by Which Metals May Exhibit ‘Ferroelectricity’
One of the most fundamental rules physics students learn in college is that metals cannot possess an internal electric field. This makes...
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624Power ComponentsTransphorm and Mouser Electronics Announce Global Distribution Agreement
Transphorm Inc. has signed a global distribution agreement with Mouser Electronics, Inc. Under the agreement, Mouser will distribute Transphorm's JEDEC- and AEC-Q101-qualified...
