Transphorm Inc. has signed a global distribution agreement with Mouser Electronics, Inc. Under the agreement, Mouser will distribute Transphorm's JEDEC- and AEC-Q101-qualified gallium-nitride (GaN) FETs and evaluation tools.
As of today, Mouser offers devices from Transphorm's 900V TO-220 and 650V TO-247 and TO-220 GaN FETs. The devices feature low crossover losses, reduced gate charge, and smaller reverse recovery charge, offering similar field reliability to silicon carbide (SiC) FETs and improved performance when compared to silicon MOSFETs. Compared to competitive GaN transistors, Transphorm's FETs also offer the industry's highest threshold voltage at 4V and gate robustness rating at ±20V.
Also available are Transphorm's automotive-qualified GaN FETs including the TPH3205WSBQA, the industry's first GaN solution to earn AEC-Q101 qualification, and the TP65H035WSQA, the industry's first 175-degree-Celsius-rated AEC-Q101-qualified device. As with non-automotive applications, in-vehicle power systems using the 650V GaN FETs can gain up to 40 percent more power density while reducing overall system costs by as much as 20 percent when compared to similar silicon-based solutions.
Mouser will stocks Transphorm's evaluation platforms, allowing designers to study switching characteristics and efficiency. The kits support various power system topologies, including inverters, half-bridge buck or boost (through-hole and SMD solutions), and the bridgeless totem-pole PFC.
They also cover a range of power ratings. Examples include the 1.2kW and 2.5kW half-bridge evaluation platforms as well as the 2.5kW and 4kW bridgeless totem-pole PFC evaluation platforms.