PowerPulse.net
Material Developments
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785Power ComponentsIVWorks Raises $6.7 Million for AI-Based Gallium-Nitride Epi Technology
IVWorks (South Korea), which manufactures gallium-nitride (GaN) epitaxial wafers, a core material in dc power devices and 5G communication devices, using deep...
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453ComponentsGaN-HEMTs Handle up to 100W for SATCOM Earth Stations
Mitsubishi Electric Corporation announced that its lineup of gallium-nitride high-electron-mobility transistors (GaN-HEMTs) for satellite-communication (SATCOM) earth stations will be expanded with the...
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769Power Supplies200W AC-DC Power Supply with GaN Switching is 2.5-X Smaller
FiDUS Power has launched the model GDA200, a compact 200W desktop ac-dc power supply. The use of gallium nitride (GaN) rather than...
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1.1KComponentsPowder Cores Provide Lowest Losses at High Frequencies for GaN and SiC Converters
For designers targeting superior efficiency and who need inductors with the lowest losses at high frequency, Magnetics, Inc. has developed a breakthrough powder...
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1.2KPower ComponentsGaN Power IC – 150W AC-DC PFC + LLC Demo Board
The NVE031E gallium-nitride demonstration board from Navitas Semiconductor uses the company’s GaNFast™ power ICs a Critical Conduction Mode (CrCM/DCM) PFC and ac-dc power...
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615Power ComponentsII-VI Inc Pens Multiyear Agreement Over $100M to Supply SiC Substrates
II‐VI Incorporated has signed a multiyear agreement of over $100M, the largest in the history of II-VI, to supply silicon carbide (SiC)...
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739Power ComponentsMaterial Switches Between Electrically Conducting and Insulating States
Northwestern Engineering researchers have developed a novel design strategy to identify new materials exhibiting a metal-insulator transition (MIT), a rare class of...
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1.8KPackaging and CoolingDiamond Film on GaN HEMTs Reduce Heat by 40% & Enable Smaller Systems
Fujitsu Limited and Fujitsu Laboratories Ltd. have successfully developed the world’s first technology for growing a diamond film with highly-efficient heat dissipation...
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701Power ComponentsSumitomo Electric to Add 150mm GaN-on-SiC Production Capacity
AIXTRON SE announced that Japanese group Sumitomo Electric Device Innovations, Inc. (SEDI) has ordered an AIX G5+ tool with 8×6-inch wafer configuration...
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907Motors and ControlDual-Axis Drive with 3-Phase Gallium-Nitride Inverter Stages – Reference Design
The just-released TIDM-02007 reference design from Texas Instruments presents a dual-axis motor drive with three-phase gallium-nitride inverter stages using Fast Current Loop...
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861Power SuppliesGallium Nitride Chargers Are Here: Navitas at CES 2020
Navitas Semiconductor announced today that it will showcase world-leading GaNFast™ power IC technology, in addition to partnerships with major electronics brands at...
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815Power ComponentsLow-Cost Gallium Nitride Crystal Manufacturing for Power Devices
The Japan Science and Technology Agency (JST) has announced the successful development of a high-quality bulk gallium nitride (GaN) growth device based...
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1.0KComponentsNew Power Capacitor Tech for Wide Band-Gap Semiconductors
The new B25640* series of HF power capacitors from TDK Corp. is especially tailor-made for silicon-carbide (SiC) semiconductors. With rated voltages of...
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657Power ComponentsSTMicro Closes Acquisition of SIC Specialist Norstel
STMicroelectronics announced the closing of the full acquisition of Swedish silicon carbide (SiC) wafer manufacturer Norstel AB. ST exercised its option to...
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800Power SuppliesSiC Enables the World’s Lightest PV Inverters in the 30- to 50-kVA Class
Fuji Electric Co., Ltd. has launched the PIS-36/380-G (1100Vdc/36kVA) and PIS-39/415-G (1100Vdc/39kVA) silicon-carbide based convection-cooled photovoltaic dc-ac inverters. These PV inverters are...
