Gallium Nitride & Silicon Carbide Applications | Sic Mosfet

April 14, 2016

GaN RF Devices Demonstrate Reliability in Space Environments

Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for...

Power Components

April 14, 2016

Freebird and EPC partner on Rad-Hard GaN Power Conversion

Freebird Semiconductor and Efficient Power Conversion Corp. (EPC) have entered into an agreement whereby Freebird will develop products for use in high reliability space and harsh environment applications based upon eGaN® power transistors and integrated circuits. Dr. Simon Wainwright, President and CEO of Freebird Semiconductor Corporation stated that, "Freebird is focused upon developing components and […]

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Communications Power

April 14, 2016

650V GaN 2kW Half-Bridge Evaluation Board

VisIC Technologies announced its new Half-Bridge Evaluation Board using its VT15R65A GaN Power ALL Switch (Advanced Low Loss Switch) in a “work...

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Energy Efficiency

April 8, 2016

Gallium Nitride to Supplant Silicon in Integrated Circuits

Researchers at HRL Laboratories, LLC. have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in...

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Energy Efficiency

April 7, 2016

Gallium-Oxide may be a New Frontier for Power Semis

Several recent news stories seem to indicate that gallium-oxide power semiconductor devices may be on the commercial horizon. Kyma Technologies, Inc., of...

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Batteries and Portable Power

April 5, 2016

GaAs Power Conversion coming from ams and Sarda

The Full Service Foundry division of ams AG and Sarda Technologies, Inc. today announced at Cadence Design Systems, Inc.’s CDNLive user conference...

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Communications Power

March 31, 2016

15MHz GaN Half-Bridge Development Boards

Efficient Power Conversion Corporation (EPC) Introduces the EPC9066, EPC9067, and EPC9068 development boards, which are configurable to a buck converter or as...

Automotive Electronics

March 18, 2016

GE gets $2.1M for SiC Development from U.S. Army

GE Aviationhas been awarded a $2.1 million contract from the U.S. Army to develop and demonstrate silicon carbide-based power electronics supporting high-voltage next-generation ground vehicle electrical power architecture. GE Aviation’s development efforts will benefit from and extend GE’s Global Research Center developments in silicon carbide MOSFET technology. The $2.1 million contract consists of an 18-month […]

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Automotive Electronics

March 16, 2016

17 Billion Field-Device Hours Demonstrate GaN Reliability

Efficient Power Conversion Corp. (EPC) announces its Phase Seven Reliability Report showing the distribution of over 17 billion accumulated field-device hours and...

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Energy Efficiency

March 14, 2016

€1B for GaN-on-Silicon, MEMs, Silicon Photonics Research

imec announced the opening of its new 300mm cleanroom. With this new 4000m facility imec’s state-of-the-art semiconductor research cleanrooms now totals 12,000m,...

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Energy Efficiency

March 11, 2016

6-inch SiC Production expanding in Asia and U.S.A.

X-FAB Silicon Foundries aims to put itself at the vanguard of wide-bandgap semiconductor production by announcing the availability of its silicon carbide...