PowerPulse.net
Material Developments
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1.9KComponents80V Half-Bridge 33MHz GaN FET Driver
Peregrine Semiconductor Corp. claims the world’s fastest gallium nitride (GaN) field-effect transistor (FET) driver, the UltraCMOS® PE29100. Built on Peregrine’s UltraCMOS technology,...
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1.2KPackaging and CoolingSiC IC Design Process Model Grant from NASA
NASA has awarded $124,982 to Ozark Integrated Circuits Inc., a technology firm affiliated with the University of Arkansas, to create a fabrication...
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1.6KEnergy Efficiency1.2kV GaN Switch Handles over 20A
Toyoda Gosei Co., Ltd. has developed the world’s first 1.2kV class power semiconductor device capable of large current operation exceeding 20A. This...
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1.4KComponents1700V SiC MOSFET Optimized for Industrial Converters
ROHM has recently announced the availability of a new 1700V SiC MOSFET, part number SCT2H12NZ, optimized for industrial applications, such as manufacturing...
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994Batteries and Portable PowerGaN Wireless Power Wins Geoff Haynes Future Power Challenge
At a ceremony held at the EPSRC Centre for Power Electronics Annual Conference 2016 in Nottingham, England, a post-graduate team from Imperial...
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1.3KBatteries and Portable PowerGaN enables 10W Wireless Power Multi-Mode Demonstrator
Efficient Power Conversion Corporation (EPC) today announces the availability of a complete demonstration multi-mode wireless power charging kit, the EPC9121. The purpose...
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1.1KEnergy EfficiencyHigh-Quality / Large-Diameter GaN Substrates
Kyma Technologies and Quora Technology announced their strategic partnership in the development and commercialization of innovative GaN substrate materials. Kyma is a...
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1.5KComponents25A / 650V Hermetic SiC FETs handle 225 Degrees C
TT Electronics today launched a SiC power MOSFET that is designed for high-temperature, power efficiency applications with a maximum junction temperature of...
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1.7KCommunications PowerGaAs Voltage Regulators to be Packaged in 3D SIPs
Sarda Technologies (Sarda), a disruptive power management component supplier and UTAC Holdings Ltd. (UTAC) today announced that Sarda will implement its Heterogeneous...
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1.2KEnergy EfficiencyEnhanced GaN-on-Silicon Epiwafers at be Unveiled
CoorsTek will unveil its enhanced Gallium Nitride on Silicon (GaN-on-Si) epiwafers at next week’s International Symposium on Power Semiconductor Devices and ICs...
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733Automotive ElectronicsSDK Expands High-Grade SiC Epitaxial Wafer Capacity
Showa Denko (SDK) has expanded its capacity for producing high-quality-grade silicon carbide (SiC) epitaxial wafers for power devices, which have already been...
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1.9KAutomotive ElectronicsGaN Device claims Highest Efficiency at Highest Frequency
VisIC Technologies is pleased to announce availability of its new generation of ALL-Switch V22S65A (with an internal SiC diode) and V22N65A (without...
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1.0KEnergy EfficiencyBuffalo to Investigate GaO Ultra-Wide Bandgap Semis
Five research projects have been selected to receive funding from the University at Buffalo‘s RENEW Institute, an interdisciplinary institute dedicated to solving...
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1.4KAutomotive ElectronicsSIC FETs enable Cure for EV Range Anxiety
Silicon-carbide (SiC) power electronics from STMicroelectronics has enabled the creation of ZapCharger Portable, the world’s smallest, smartest, and safest electric-car charging station...
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Communications Power
GaN RF Power Transistors for Cellular Base Stations
NXP Semiconductors N.V. announced an expansion to its portfolio of 48V GaN RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies. With […]
