PowerPulse.net
Material Developments
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2.3KEnergy EfficiencyGaN used to Design 2.5MHz 3kW Resonant DC-DC
Researchers at the Fraunhofer Institute for Solar Energy Systems ISE in Freiburg, Germany, together with partners, have investigated how GaN power devices...
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761Communications PowerRichardson Electronics and USCi Sign Distribution Agreement
Richardson Electronics, Ltd. announced today a new distribution agreement with United Silicon Carbide, Inc. (USCi), a leading manufacturer for SiC devices located...
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2.0KAutomotive ElectronicsWolfspeed Wins 2016 R&D 100 Award for SiC EV Inverter
Wolfspeed, A Cree Company won a 2016 R&D 100 Award for its high-temperature, wide bandgap (WBG) underhood inverter for electric vehicles using...
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1.4KEnergy EfficiencyAluminum Nitride in Batch Production for Power Devices
Picosun Oy now provides its customers production-scale aluminum nitride (AlN) batch process with superior film thickness uniformity and fast speed. Picosun AlN...
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1.2KPower ComponentsTest Solution Targets SiC and GaN Power Devices up to 3kV
Tektronix introduced the Keithley S540 Power Semiconductor Test System, a fully-automated, 48-pin parametric test system for wafer-level testing of power semiconductor devices...
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1.1KBatteries and Portable PowerJJPlus and EPC Partner on GaN-Based Wireless Charging
In an effort to address the recently announced Taiwan wireless power standards organization’s announcement of adopting AirFuel Alliance‘s resonant wireless charging standard,...
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1.7KCommunications PowerSarda Taps Magwel for GaAs Power Transistor Modeling
Sarda Technologies, a disruptive power management component supplier is announcing that it has adopted PTM, the power transistor modeling solution developed by...
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676Communications PowerSiC Schottkys in UPSs for North American Data Centers
Fuji Electric Corp. of America has announced that they have developed their next generation UPS System for the North American data center...
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1.1KEnergy EfficiencyRaytheon gets $14.9 Million to Advance GaN Technology
The U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded Raytheon Company a $14.9 million contract...
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855Packaging and CoolingSiC IPM for Aerospace is Aim of CISSOID and DDC Collaboration
CISSOID announced a collaboration with Data Device Corporation (DDC) and with its subsidiary Beta Transformer Technology Corporation (BTTC) for the development of...
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1.3KComponentsSiC Schottky Optimized for High-Efficiency PFC Circuits
ROHM has recently announced the availability of 3rd generation SiC Schottky Barrier Diodes (SBDs) optimized for power supply PFC circuits in servers...
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Communications Power
“Getting the Most from GaN Transistor and IC Chip-scale Packaging” – Webinar
Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a free one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on November 3rd from 11:00 AM to 12:00 PM (EDT). GaN transistors and integrated circuits are significantly faster and smaller than their silicon ancestors. This has […]
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1.0KAutomotive ElectronicsROHM Introduces SiC Technology into Formula E
Last week ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season...
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1.8KAutomotive Electronics1000V / 65mOhm SiC MOSFET
Wolfspeed, a Cree Company and a leader in silicon carbide (SiC) power products, has introduced a 1000V MOSFET that enables a reduction...
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Energy Efficiency
Mentor Graphics Joins WBGi Power Electronics Consortium in Japan
Mentor Graphics Corporation joined the Wide Band Gap integration (WBGi) power electronics consortium to participate in thermal management and power cycling initiatives. The WBGi Consortium, established in 2013 by Professors Katsuaki Suganuma and Tsuyoshi Fuaki of Osaka University in Japan, assembles academics and industrialists worldwide to leverage the possibilities of wide-bandgap technology and its challenges. […]
