PowerPulse.net
Material Developments
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763Communications PowerBulk AlN Platform for GaN High Voltage and Power
University of Notre Dame and Cornell University have claimed the first measurements on aluminum nitride/gallium nitride (AlN/GaN/AlN) quantum well (QW) field-effect transistors...
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1.4KAutomotive ElectronicsCree Pays $12.5 Million to Terminate Wolfspeed Sale
Cree, Inc. announced that it will terminate the definitive agreement to sell its Wolfspeed Power and RF division, which includes the silicon...
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788Energy EfficiencyHexaTech and OSRAM Announce AlN Strategic Relationship
HexaTech Inc. announced today the signing of two strategic agreements with OSRAM Opto Semiconductors GmbH, of Regensburg, Germany. The agreements include a...
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876Energy EfficiencyLow-Leakage, Doping-Free 600V GaN HEMT Epiwafers
The latest generation of ALLOS Semiconductors‘ high crystal quality GaN-on-Si process achieves excellent isolation without doping. Applying this technology ALLOS recently concluded...
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749Energy EfficiencyGaNonCMOS Project Aims for GaN Commercialization
The Horizon 2020 EU Research and Innovation Program called GaNonCMOS has been launched. In the next 4 years this consortium will develop...
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606Energy EfficiencySiC Computer Chips for Longer Venus Surface Missions
A team of scientists at NASA’s Glenn Research Center in Cleveland recently completed an SiC technology demonstration that could enable new scientific...
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658Energy EfficiencyNY-PEMC Fabs Initial 150mm SiC-Based Patterned Wafers
The New York Power Electronics Manufacturing Consortium (NY-PEMC) at SUNY Polytechnic Institute‘s (SUNY Poly) Albany NanoTech Complex announced today that it has...
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748Communications Power£4.3 Million for GaN-on-Diamond Microwave Power
The University of Bristol has been awarded a £4.3 million grant from the Engineering and Physical Sciences Research Council (EPSRC) to lead...
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1.1KAutomotive ElectronicsMotor Control for SiC Drives Embedded in Automotive MCUs
Renesas Electronics today announced the development of a circuit technology dedicated for motor control that realizes green vehicles satisfying stricter automotive CO2...
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1.1KAutomotive Electronics650V GaN Power ICs get Production Qualification
Navitas Semiconductor today announced the immediate availability of production qualified iDrive™ GaN Power ICs using the company’s proprietary AllGaN™ technology. The NV6131,...
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871Communications PowerGaN Transistor Thermal RC Models Enhance SPICE Simulations
To support customers who are modeling new systems using SPICE simulations, GaN Systems has released individual computer models for each of their...
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871Energy Efficiency£13 Million EU Funding Boost for Compound Semis
A £13m EU funding boost to help put Cardiff University’s Institute for Compound Semiconductors at the forefront of 21st Century technologies has...
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1.3KCommunications Power650V and 1200V SiC Schottkys for Multi-kW Designs
Wolfspeed, A Cree Company has added four new SiC Schottky diodes to its portfolio, further extending what was already recognized as the...
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Automotive Electronics
EU CHALLENGE Project Seeks 3C-SiC Devices for EVs
CHALLENGE is a 48-month European Union HORIZON 2020 project financed under the Nanotechnologies, advanced Materials, Biotechnology and Production (NMBP) work program that studies growth, processing and devices in cubic silicon carbide (3C-SiC). 3C-SiC technology is expected to have a large impact on the future power device market and is particularly suited for implementation in hybrid […]
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2.4KEnergy EfficiencyChoice between Si, SiC and GaN Growing in Complexity
A team of authors from Infineon and the Power Electronic Systems Laboratory, ETH Zurich, presented a detailed analysis of the technical tradeoffs...
