PowerPulse.net
Material Developments
-
![]()
![]()
2.4KPower ComponentsMicrosemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica
Microsemi Corporation today announced it has become a member of PowerAmerica—a manufacturing institute comprised of public and private representatives from the semiconductor...
-
![]()
![]()
2.2KPower ComponentsHigh-Purity Silicon Carbide Technology Platform for SiC Power Devices
Pallidus, Inc. today announced its proprietary M-SiC™ material and technology platform with the capability to deliver cost/performance parity against silicon devices in...
-
![]()
![]()
1.1KPower Quality ProtectionElectric Power Research Institute Funds GRAPES SiC Project
The National Science Foundation’s Center for GRid-connected Advanced Power Electronic Systems (GRAPES) in the College of Engineering’s Department of Electrical Engineering will...
-
![]()
![]()
2.3KSwitch-Mode PowerEnhanced LTSpice Model Simplifies Designing with GaN
Power system design engineers want to be fast, accurate and confident with their simulated designs prior to building hardware. Achieving these goals...
-
![]()
![]()
1.6KComponentsDual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs
Qorvo® today introduced a new asymmetric Doherty amplifier that enables customers to achieve ultra-high levels of power efficiency in the design of...
-
![]()
![]()
1.8KWireless Power33-Watt AirFuel Alliance Compatible Wireless Power Demo Kit
Efficient Power Conversion Corporation (EPC) today announced the availability of a complete class 4 wireless power charging kit, the EPC9120. The system...
-
![]()
![]()
1.5KCommunications PowerSiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power
Wolfspeed, A Cree Company, has advanced the development of high efficiency data center power supplies through the implementation of an innovative totem-pole...
-
![]()
![]()
1.8KPower ComponentsGaN Gives Radar 360 Degree Threat Detection Ability
Lockheed Martin will unveil its next generation air and missile defense radar demonstrator at the annual Space & Missile Defense Symposium this...
-
![]()
![]()
1.9KPower ComponentsII-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.
II‐VI Incorporated announced its acquisition of Kaiam Laser Limited, a 6-inch wafer fabrication facility in Newton Aycliffe in the United Kingdom. The...
-
![]()
![]()
1.2KPower ComponentsShowa Denko Acquires Assets Related to SiC for Power Devices
Showa Denko (SDK) has decided to acquire assets concerning Sublimation-recrystallization Method to manufacture silicon carbide (SiC) wafers from Nippon Steel & Sumitomo...
-
![]()
![]()
1.7KEnergy EfficiencyCarbon-Doping Not Needed to Achieve High-Isolation GaN-on-Si
At last week’s ICNS scientific conference ALLOS‘ co-founder and CTO Dr. Atsushi Nishikawa discussed three common believes about GaN-on-Si: Firstly, that the...
-
![]()
![]()
1.4KCommunications PowerW-Band GaN Transmitters Enable Longer Range / Higher Bandwidth
Fujitsu Limited and Fujitsu Laboratories Ltd. today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use...
-
![]()
![]()
1.8KPower ComponentsNext-Generation SiC Platform for 6-inch Wafers
GT Advanced Technologies Corporation announced that it has launched for commercial sale a silicon carbide production solution with a stable and repeatable...
-
![]()
![]()
1.3KPower ComponentsBMW i Ventures makes Strategic Investment in GaN Systems
BMW i Ventures has announced a strategic investment in GaN Systems, a fabless power transistor company. GaN Systems focuses on GaN-based power...
-
![]()
![]()
1.5KPower ComponentsCreating Many Thin Layers from a Single GaN Wafer
What would a simple technique to remove thin layers from otherwise thick, rigid semiconductor crystals mean for the semiconductor industry? This concept...
