PowerPulse.net
Material Developments
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1.5KPower ComponentsNew Process for Making SiC Power Devices Opens Market to More Competition
Researchers from North Carolina State University are rolling out a new manufacturing process and chip design for silicon carbide (SiC) power devices,...
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1.3KComponentsNext-Generation GaN HEMTs Deliver Unmatched Efficiency
Wolfspeed, A Cree Company, has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of...
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2.5KStandardsJEDEC Committee to set Standards for WBG Power Semiconductors
JEDEC Solid State Technology Association today announced the formation of a new JEDEC committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors. Led...
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1.3KPower ComponentsSigning Seals Compound Semiconductor Cluster in South-East Wales
IQE plc today hosted an historic signing ceremony between Cardiff Capital Region City Deal, Welsh and UK Governments and IQE plc, to...
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1.3KComponents1200-Volt SiC Schottkys for High-Temperature Designs
Solid State Devices, Inc. (SSDI) announced the release its latest silicon carbide (SiC) Schottky rectifiers, the SSR15C120D1 series. These 15A, 500- to...
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1.8KWireless PowerGaN-based High-Power, Near Field WattUp Charging Solution
Energous Corporation announced a new, high-power, Near Field WattUp charging solution for electronic devices such as smartphones, tablets, smart speakers, game controllers,...
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1.7KPower ComponentsCompound Semiconductor Applications Catapult appoints CEO
The U.K. Compound Semiconductor Applications Catapult announces the appointment of Stephen Doran as its Chief Executive Officer. Serving as the Director of...
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1.6KPackaging and CoolingPressureless Sinter Joining for Next-Gen GaN & SiC Power Semis
Silver micron-particle sintering joining technology developed by Professor Suganuma Katsuaki at The Institute of Scientific and Industrial Research, Osaka University, is promising...
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3.5KPower ComponentsEpiGaN adds 5th Investor to Globally Execute Its Strategy
EpiGaN announced that the Belgium Federal Holding and Investment Company (FPIM/SFPI) has joined its group of investors to fund the company’s product...
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2.1KPower ComponentsROHM now Offering SiC, IGBTs and Gate Drivers in India
ROHM Semiconductor India Pvt Ltd (RSI) a subsidiary of ROHM Co. Ltd., Kyoto, has recently announced an array of power solutions like...
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1.8KPower ComponentsCree Reports Solid Foundation for Growth in Fiscal Year 2018
Cree, Inc. today announced revenue of $359 million for its fourth quarter of fiscal 2017, ended June 25, 2017. This represents an...
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1.9KEnergy EfficiencyARPA-E Awards $30 Million for High-Performance WBG Power Converters
The Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E) today announced $30 million in funding for 21 innovative projects as part of the...
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1.7KComponents250W 50V GaN HEMT with High Efficiency to 3.0GHz
Wolfspeed has extended its family of 50V unmatched GaN HEMT RF power devices by adding a 250W part with a frequency range...
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2.3KPower Components60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz
Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of GaN transistors and get their products into volume...
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6.3KPower ComponentsDC-DC Converters for Driving Next-Gen SiC MOSFETs
High-frequency and high-voltage switching are the main challenges of driving SiC MOSFETs. Extreme voltage potentials between the control and power side can...
