PowerPulse.net
Material Developments
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2.5KPower ComponentsBeryllium-Doped Gallium-Nitride for Higher-Power Devices
Physicists at Aalto University have made a breakthrough in revising methods largely discarded 15 years ago. They have discovered a microscopic mechanism...
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1.5KPower ComponentsKyma Demonstrates High Quality 200-mm GaN on QST® Templates
Kyma Technologies, Inc. has used its new K200™ hydride vapor phase epitaxy (HVPE) growth tool to produce high quality 200-mm diameter HVPE...
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2.2KPower ComponentsSiC Devices, Power in 3D Packaging, and More at IEDM 2017
New discoveries about SiC mobility, Extreme 3D integration and Thermal effects in 3D monolithic ICs are among the topics that will be...
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1.7KPower ComponentsDeep-Depletion: A New Concept for WBG Power MOSFETs
An international team of researchers has created a proof of concept that uses the deep- depletion regime in bulk-boron-doped diamond MOSFETs to...
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1.2KPower ComponentsDr. Jon Zhang now Director Power Device Technology at PowerAmerica
Dr. Jon Zhang has joined PowerAmerica as Director of Power Device Technology. Zhang received his PhD in 2001 from the University of...
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3.5KSwitch-Mode PowerSwitch 100kVA at 50kHz with SiC Power Evaluation Platform
A new SiC Power Stack Evaluation Sample is available from Semikron. The Stack is rated to 100kVA at a switching frequency of...
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2.5KPower ComponentsGaN Systems’ Eval Board Simplifies MegaHertz Power
Audio amplifiers, lasers, and dc-dc wireless chargers hit record performance with Gallium-Nitride From Beethoven to Beyoncé and from the Allman Brothers to...
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3.4KPower Components12V-to-Load DC-DC Dev Board Features 10MHz GaN Half-Bridge
Efficient Power Conversion Corporation (EPC) has announced the availability of the EPC9086 development board, a high efficiency half-bridge development board that can...
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1.9KPower ComponentsCree aiming to Double SiC Capacity at Wolfspeed
Cree, Inc. announced financial results for its first quarter of fiscal 2018, ended September 24, 2017. Revenue for the first quarter of...
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1.9KPower ComponentsNavitas Announces High-Volume Capacity for GaN ICs
Navitas Semiconductor, the industry’s first and only GaN power IC supplier, has announced major manufacturing partnerships with TSMC and Amkor to support...
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1.3KComponentsSecond-Generation 650V SiC Schottky Barrier Diodes in DPAK
Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated...
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3.0KComponentsGaN FET Driver Brings Fastest Switching Speeds to Class-D Audio
Peregrine Semiconductor Corp. today announced the UltraCMOS® PE29102, a high-speed FET driver. With a switching frequency up to 40MHz, the PE29102 delivers...
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1.0KPower ComponentsEPC Names MIGVAN to Represent it’s GaN FETs and ICs in Isreal
To support its accelerating growth throughout Israel, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of MIGVAN as its...
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1.3KPower ComponentsSumitomo Electric Launches 99% Defect Free SiC Epitaxial Wafers
Utilizing its multi-parameter and zone (MPZ™) control technology and 30-year experience in compound semiconductor development, Sumitomo Electric has succeeded in developing a...
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1.3KPower ComponentsGaN-on-Si RF Systems Technology and Power Devices Advance
MACOM Technology Solutions Inc. announced the newest entry in its GaN-on-Si power transistor portfolio for pulsed L-Band radar systems targeted for airport...
