PowerPulse.net
Material Developments
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1.4KPower Components“Twinning” Promises to Vastly Reduce Wafering Costs for SiC-Based Devices
Siltectra GmbH has validated a breakthrough capability for its COLD SPLIT technology. COLD SPLIT is a proven wafer-thinning technique for substrate materials...
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1.9KPower ComponentsInfineon and Cree agree on Long-Term SiC Wafer Supply
Infineon Technologies AG and Cree, Inc. agreed on a strategic long-term supply agreement for the provision of silicon carbide (SiC) wafers. Thus,...
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1.2KPower ComponentsInsulated-Gate GaN Power Transistor Capable of Continuous Stable Operation
Panasonic Corporation today announced that it has developed an insulated-gate Metal Insulator Semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous...
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2.5KPower ComponentsSelective-Area Doping to Produce Vertical GaN Power Switches
A team of researchers from the University of New Mexico (UNM) and Sandia National Laboratories has received funding from ARPA-E to develop...
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7.2KComponentsNew Ferrite for High-Frequency GaN and SiC Power Converters
Apart from miniaturization, improved efficiency is the most import development goal in the design of power supply units. Every tenth of a...
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1.3KComponents1200V SiC Schottkys Designed to Endure High-Pollution Environments
Wolfspeed, a Cree Company, has expanded its C4D family of 1200V SiC Schottky diodes to introduce three new products in a TO-247-2...
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2.3KPower ComponentsNavitas Showcases GaNFast™ Power ICs at APEC 2018
Navitas Semiconductor announced that the company will demonstrate its leading GaN power IC technology at the Applied Power Electronics Conference (APEC) March...
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2.4KPower ComponentsInfineon to Highlight GaN, SiC and Si Power Electronics Portfolio
Power semiconductor technologies based on advanced GaN, SiC and Si will share the spotlight in the Infineon Technologies AG exhibit at the...
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1.5KPower ComponentsEPC to Showcase GaN FETs and ICs in End Products at APEC
The Efficient Power Conversion (EPC) team will be delivering seven technical presentations on gallium-nitride (GaN) technology and applications at APEC 2018 in...
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1.3KPower ComponentsDemonstrating How GaN has Transformed Power Conversion Products
GaN Systems today announced its comprehensive lineup for the Applied Power Electronics Conference & Exposition (APEC) conference in San Antonio, Texas being...
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2.1KComponentsGaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz
Integra Technologies has released a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power...
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1.3KPower ComponentsMACOM and STMicro Bringing GaN-on-Silicon to Mainstream RF Markets
MACOM Technology Solutions Holdings, Inc. and STMicroelectronics announced an agreement to develop GaN-on-Silicon wafers to be manufactured by ST for MACOM’s use...
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867Power ComponentsGallium-Oxide may Produce Cheaper and Smaller Devices Compared with Silicon
Silicon has long been the go-to material in the world of microelectronics and semiconductor technology. But silicon still faces limitations, particularly with...
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2.3KComponentsRenesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die
Renesas Electronics today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs...
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3.8KComponents1200V GaN-based Power Modules from VisIC and TSMC
VisIC Technologies is now sampling the industry’s first 1200V GaN modules, and is announcing a major manufacturing partnership with TSMC on their...
