PowerPulse.net
Material Developments
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1.8KComponents1200V SiC FETs Replace IGBTs and Si FETs without Changes to Gate Drive
Designers of Power Factor Correction stages (PFCs), Active Frontend Rectifiers, LLC converters and Phase Shift Full Bridge converters can now upgrade existing...
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10.0KAutomotive ElectronicsSilicon Carbide enables 30kW Three-Phase Vienna PFC Reference Design
Microsemi Corporation today announced the availability of its new scalable 30kW, three-phase Vienna power factor correction (PFC) topology reference design developed in...
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2.7KPower ComponentsROHM Expands its Range of Power Devices to Offer Complete Power Solutions
ROHM Semiconductor will showcase its latest power product designs at PCIM, the leading trade fair for Power Electronics, Intelligent Motion and Energy...
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1.9KDigital PowerGaN Enables Software-Defined Switch-Mode RF Power Amplifiers
Eridan Communications’ RF transmitter technology enables previously-unattainable single radio capabilities and allows for multiple radios to work in combination to extend bandwidth...
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7.8KComponents400W and 800W GaN Half-Bridge Evaluation Board
Panasonic Semiconductor Solutions Co. Ltd. now offers the PGA26E07BA-SWEVB008 (800W) and PGA26E19BA-SWEVB008 (400W) half-bridge evaluation boards (with dedicated X-GaN driver + general...
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1.9KPower ComponentsGTAT to Showcase Six-Inch SiC Wafers and More at SNEC 2018 PV Power Expo
GTAT Corporation (GTAT) will be showcasing several of its new products at this year's SNEC 2018 Power Expo being held in Shanghai,...
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2.3KComponentsFirst 1,000μF Multilayer Ceramic Capacitor for High-Frequency Power Converters
Taiyo Yuden Co., Ltd. has announced the mass-production of the PMK432 BJ108MU-TE (4.5 x 3.2 x 3.2 mm) product, which realizes a...
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1.3KPower ComponentsII-VI Incorporated Opens New Epi Wafer Facility
II‐VI Incorporated announced the opening of its new high tech compound semiconductor material center of excellence in Champaign, Illinois. The ribbon-cutting ceremony...
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2.5KComponentsCompact UL 1577 Certified Drivers for IGBTs and SiC MOSFETs
Infineon Technologies AG now offers the EiceDRIVER™ 1EDC Compact 300 mil family of single channel gate driver ICs. With an insulation test...
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1.3KPower ComponentsToshiba to Exhibit Multiple New Products at PCIM Europe
Toshiba Electronic Devices & Storage Corporation has announced their participation in PCIM Europe 2018 where they will showcase their comprehensive portfolio of...
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3.1KPackaging and CoolingTDK Acquires Faraday Semi to Bolster Power Solutions with, Si, GaN & 3D Packaging
TDK Corporation announced today the acquisition of Faraday Semi LLC, a U.S.-based venture-backed company engaged in the design of advanced power semiconductor...
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1.3KPower ComponentsPowerBase Pushing for High-Voltage GaN Power Devices
Power semiconductors play an important role in power conversion in a wide range of electronic equipment we use in our everyday lives,...
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1.3KSmart Grid PowerControlling the Crystal Structure of Gallium Oxide for Power Devices
Precise control of the atomic structure of gallium-oxide layers improves the development of high-power electronic devices. A simple method that uses hydrogen...
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1.4KPower ComponentsEPC Announces AEC Q101 Qualification for Two 80V GaN FETs
Efficient Power Conversion Corp. (EPC) announced successful AEC Q101 qualification of two eGaN® devices, opening a range of applications in automotive and...
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6.6KComponentsGaN-based 300V-in, 5A-out Half-Bridge Development Board with Digital Isolation
The EPC9084 development board from Efficient Power Conversion is a 350V maximum device voltage, 5A maximum output current, half-bridge with onboard gate...
