PowerPulse.net
Material Developments
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1.5KPower ComponentsKyma Working with IEMN to Reduce Leakage Currents in HV GaN-on-Si HEMTs
Kyma is pleased to be acknowledged for helping scientists at The Institute of Electronics, Microelectronics and Nanotechnology (IEMN) in France to realize...
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2.0KComponentsGalvanic-Isolated Gate Driver Controls and Protects SiC or Si Power Transistors
With 26V maximum gate-drive output voltage and optional separate turn-on/turn-off outputs or integrated active Miller clamp, STMicroelectronics‘ STGAP2S single-channel galvanic isolated gate...
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1.9KComponentsSiC Power Devices are First to Meet Automotive AEC-Q101 Standards
Wolfspeed, A Cree Company and leader in silicon carbide (SiC) power products, announces E-Series™, a new family of robust SiC semiconductor devices...
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1.9KPower Components9kW GaN Half-Bridge Eval Board without Paralleling
VisIC Technologies has announced a new water-cooled V22N65A-HBEVB half-bridge evaluation board to demonstrate the high-power performance achievable using its GaN All-Switches™ (Advanced...
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2.2KPower ComponentsNexGen to make Vertical GaN FETs with AIXTRON MOCVD Technology
AIXTRON SE will provide high-end MOCVD technology to NexGen Power Systems Inc. for the continued development of GaN-based electronic devices enabling more...
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2.7KAutomotive ElectronicsPlatform for Automotive Traction Inverters can use Si or SiC Devices
Developments within automotive technology are ever more centered around the electrification of the drivetrain and demand for high quality IGBT and silicon...
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1.4KPower ComponentsReliability Methods and Standards for WBG Device Production Testing
Reedholm Systems announces, effective immediately, that the Company has formally engaged with The Piner Research Group (located on the Texas State University...
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2.5KPower ComponentsWorld’s First Normally-Off Gallium-Oxide MOSFET Fabricated
FLOSFIA has successfully demonstrated a gallium-oxide (α-Ga2O3) normally off MOSFET. The world-first α-Ga2O3 normally-off MOSFET comprises of N+ source/drain layer, p-type well...
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6.7KPower ComponentsGaN/SiC RF Power Modules Help Simplify Radar Amplifier Design
Integra Technologies announced the formal launch of our new line of over a dozen standardized RF Power Modules ("Pallets"). Standard RF Power...
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1.1KPower ComponentsSDK’s Third Expansion of SiC Wafer Production Facilities in Two Years
Showa Denko (SDK) will further expand the production capacity for high-quality-grade silicon carbide (SiC) epitaxial wafers (‘High-Grade Epi’ or ‘HGE') for power...
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1.7KPower ComponentsGT Advanced Technologies Opens New Silicon Carbide Manufacturing Facility
GTAT Corporation (GTAT) opened its new state-of-the-art silicon carbide manufacturing plant with a ribbon-cutting ceremony on Tuesday, June 26, 2018 that included...
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1.3KPower ComponentsEpistar to Spin Off III-V Semiconductor Foundry Services
Board of Directors of Epistar passed the resolution on June 25, 2018 that the NT$1 billion business value will be transferred to...
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2.9KPower ComponentsSiC MOSFETs enable 240A Pulses at 60Hz Repetition
A joint development group comprising Hitoshi Tanaka, Division Director of the XFEL Research and Development Division at RIKEN’s SPring-8 Center; Chikara Kondo,...
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1.7KComponentsThermoelectric Semiconductors with Nano-polycrystalline Materials
LG Innotek today announced that it has succeeded in its development of thermoelectric semiconductors that are made from nano-polycrystalline materials. The product...
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1.4KPower ComponentsRefurbished £4m Institute for Compound Semiconductors Clean Room
Economy Secretary Ken Skates has welcomed Cardiff University's new refurbished £4m Institute for Compound Semiconductors Clean Room. Guests were able to learn...
