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Material Developments
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935Power ComponentsDiscovery Could Lead to Cheaper Solar Cell and Electronics Fabrication
Imagine printing electronics with an inkjet printer or even painting solar panels onto building walls. Such technology would cut the cost of...
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631Power ComponentsAmtech Investing to Meet Demand Growth of SiC, Optics, and Silicon
Amtech Systems, Inc. reported that its subsidiary, PR Hoffman, will be moving to a larger manufacturing facility. The subsidiary has also hired...
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660Power ComponentsMaterial Changes Between Superconducting and Insulating with Flip of a Switch
Researchers at the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab) have developed a graphene device that switches from superconducting...
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2.0KComponents6.6kW Bidirectional CLLLC Resonant Dual Active Bridge Reference Design
The TIDM-02002 CLLLC resonant dual active bridge (DAB) with bidirectional power flow capability and soft switching characteristics is a reference design from...
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1.0KPower ComponentsAscatron Obtains €3.5 Million Funding for SiC Product Development
Ascatron reported that it has obtained €3.5 million funding for SiC product development. The company secured the funding as a result of...
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1.4KComponents1200V, 450A Half-Bridge Module Maximizes the Benefits of SiC
Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust,...
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1.7KEnergy HarvestingAsymmetrical Nanotubes Found to be Photovoltaic with no P-N Junction
A team of physicists discovered a novel kind of nanotube that can generate current in the presence of light. Devices including infrared...
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1.2KPower ComponentsThermoelectric Material Fabricated at Low Temperature
Researchers at King Abdullah University of Science and Technology (KAUST) say that some of the energy wasted as heat could be recaptured...
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1.8KPower Quality Protection3.6kW Totem Pole PFC with SIC MOSFETs and Inrush Current Limiter – Reference Design
The STEVAL-DPSTPFC1 reference design from STMicroelectronics is a 3.6kW bridgeless totem pole boost circuit that achieves a digital power factor correction (PFC)...
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1.3KComponentsGate-Driver System Targets 1.7kV to 4.5kV IGBT and SiC Dual Power Modules
Power Integrations announced the SCALE-iFlex™ gate-driver system for IGBT, hybrid, and silicon-carbide (SiC) MOSFET power modules with blocking voltages from 1.7kV to...
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1.4KComponents900V GaN FETs Support 8kW in Typical Half-Bridge Configuration
Transphorm Inc. introduced its second 900V FET, the Gen III TP90H050WS, enhancing the industry’s only 900V GaN product line. These devices now...
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795Power ComponentsHigh Volume ALD Solution for GaN Power Device Passivation
Oxford Instruments Plasma Technology (OIPT) launched a plasma atomic layer deposition (ALD) high volume manufacturing (HVM) solution for the GaN power device...
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926Power ComponentsSanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process
Sanan Integrated Circuit Co., Ltd., a pure-play wafer foundry with its advanced compound semiconductor technology platform, today announced the commercial release of...
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1.8KComponentsSiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design
The CRD300DA12E-XM3 300kW three-phase inverter reference design from Wolfspeed demonstrates high system-level power density and efficiency obtained by using Wolfspeed’s new XM3...
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1.4KPower ComponentsCompound Semiconductor Centre Participates in UK SiC Supply Chain Project
The Compound Semiconductor Centre is partnering on the project which was awarded £9.8m in funding through the Advanced Propulsion Centre (APC). The ESCAPE...
