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1.1KAutomotive Electronics100-V Enhancement-Mode eGaN FETs Evaluated Faster with New Development Board
Efficient Power Conversion Corporation (EPC) now offers the EPC9010 development board to make it easier for engineers to start designing with a...
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Communications Power
Microsemi Adds Multiple Devices to NPT IGBT Product Family
Microsemi Corporation announced the availability of more than a dozen new devices in its new generation of 1,200V non-punch through (NPT) IGBTs which include 25A, 50A and 70A current ratings. Microsemi’s NPT IGBT product family is designed for a wide range of industrial applications requiring high power and high performance, with the newest devices well-suited […]
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Automotive Electronics
Docea Enables Dynamic Power and Thermal Management Analysis with Real Use Cases
Docea Power, Inc. announced new releases of Aceplorer 3.1 and AceThermalModeler 2.0. Aceplorer 3.1 features a new solver for coupled power and thermal transient simulations featuring 1000x performance gains over the previous versions and a communication protocol enabling the co-simulation of Aceplorer models with virtual platforms and performance analysis tools. AceThermalModeler 2.0 (ATM) improves its […]
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1.2KAutomotive ElectronicsSecond-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar
Cree, Inc. announced the release of its second-generation SiC MOSFET enabling systems to have higher efficiency and smaller size at cost parity...
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597Communications PowerFairchild’s Smart Gate Driver Optocoupler Enables Simpler Design and Increased Reliability
For today's high-power industrial applications, designers have traditionally used discrete components for the IGBT drivers, resulting in higher overall design complexity and...
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Automotive Electronics
Global Power Device Comes out of Stealth, Launches SiC Devices
Global Power Device, Inc. (GPD) announced a new line of Silicon Carbide (SiC) diodes that delivers ultra-high performance at prices that are competitive with conventional Silicon diodes. The company’s production-ready, 150mm Silicon Carbide Wafer processing technology reduces the cost of devices by up to 60%, and is expected to make SiC the value leader at […]
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1.5KAutomotive ElectronicsTransphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices
Transphorm Inc. today announced the Total GaN™ family of GaN (Gallium Nitride) on silicon transistors and diodes, establishing the world's first JEDEC-qualified...
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Automotive Electronics
Powerex/Mitsubishi Electric Power Semiconductors Expand Worldwide Web Sales
Powerex, Inc. now offer worldwide web sales for Mitsubishi Electric Power Semiconductors. Powerex, a joint venture company owned by both Mitsubishi Electric and General Electric, exclusively provides sales, marketing, strategy and logistics support for Mitsubishi Power Semiconductor devices in the Americas. The relationship with Mitsubishi, the world leader in IGBTs and IPMs, allows Powerex to […]
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Communications Power
Toshiba Adds Triac Output Photocouplers with Reinforced Insulation to Meet International Safety Standards
Toshiba America Electronic Components, Inc. (TAEC) has announced the addition of the 600V TLP265J and TLP266J to its lineup of photo triac couplers. They are targeted for applications such as triac drivers, programmable controllers, ac-output modules, and solid-state relays. The TLP265J consists of a non-zero crossing photo triac, and the TLP266J consists of a zero […]
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617Automotive Electronics10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance
Central Semiconductor has released the CSIC10-1200 , 10 Amp, 1,200 Volt silicon carbide (SiC) Schottky rectifier designed for high-frequency systems where energy...
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835Automotive ElectronicsYokogawa Expands Offering of Digital Power Meters
Yokogawa Electric Corporation has expanded its family of Digital Power Meters with the addition of the WT300 series. This new addition to...
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Automotive Electronics
IXYS Introduces Fast and Efficient 650V XPT Trench IGBTs
IXYS Corporation announced the release of a new IGBT product line – 650V XPT Trench IGBTs. The current ratings of devices in the new product family range from 30A to 200A at a high temperature of 110C. With on-stage voltages as low as 1.7V, these new XPT devices are designed to minimize conduction and switching […]
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Automotive Electronics
MIT Technology Review: 50 Disruptive Companies 2013
Eight power electronics and energy-related companies were included in the recently-published annual "50 Disruptive Companies" article in the MIT Technology Review. Those companies include (in alphabetical order): ABB, Alta Devices, Ambri, Aquion Energy, BrightSource Energy, Dow Chemical, General Electric, and Philips. Only two of these companies (Alta Devices and General Electric) were on last year's […]
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943Automotive ElectronicsHybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation
GeneSiC Semiconductor announced the immediate availability of its second-generation hybrid mini-modules using 1,200V/100A SiC Schottky rectifiers with rugged silicon IGBTs the GB100XCP12-227....
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850Batteries and Portable PowerMiniature Through-Hole Power FETs from APEC Combine Fast Switching, Low Gate Charge
Advanced Power Electronics Corp. (USA) has launched a new series of power MOSFETs in the popular TO-92 through-hole package which is widely...
