40V MOSFET with Shield-Gate Tech and New DFN 5X6 Package

Alpha and Omega Semiconductor Limited introduced the “Source Down” in a DFN 5×6 package in combination with a 40V Shield-Gate Technology (AlphaSGT™) MOSFET. AOS’ flip-chip know-how achieves the Source Down capability and the packaging technology features a very low package resistance and inductance.

The AOE66410 is suited for synchronous rectification (SR) in telecommunications, half-bridge configuration of BLDC motors, and battery management where paralleling is essential. Other typical applications include chargers and synchronous rectification in dc-dc and ac-dc converters.

The AOE66410 (40V) features the same form factor as a standard DFN 5×6 package, but the source pad has the largest connection to the PCB. This connection will enable easier paralleling of devices and provides a larger thermal area to dissipate any losses. The AOE66410 has a 1mΩ max at 10Vgs with a maximum drain current of 100A at 25°C case temperature.

Related: Single-Chip Triple Half-Bridge Gate Drivers Sink 350mA and Source 200mA

“Source Down can offer a significant improvement in PCB layout and simplify new parallel designs, which are suited for high-power telecommunication power supplies,” said Peter H. Wilson, Marketing Director of the MOSFET product line at AOS.

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  • Thermal-enhanced XSFET package
  • Trench Power AlphaSGT™ technology
  • Low RDS(on)
  • Low Gate Charge
  • Optimized for Common Ground of Secondary-Side Synchronous Rectifier
  • RoHS and Halogen-Free Compliant
Pricing and Availability

The AOE66410 is available immediately in production quantities with a lead time of 12-14 weeks at a unit price for 1,000 pieces of $1.95.

Alpha & Omega Semiconductor
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