Vishay 40V N-Channel TrenchFET Features RDS(on) of 1.1 mΩ and Drain Current of 200A
Vishay Intertechnology Inc. introduced a new AEC-Q101-qualified, 40 V n-channel TrenchFET® power MOSFET. Specifically for "heavy duty" automotive applications, the SQM200N04-1m1L is Vishay's first power MOSFET to take advantage of the low resistance contribution and very high current rating of the 7-pin D²PAK package.
When combined with Vishay's high-density n-channel TrenchFET technology, the result is an ultra-low on-resistance of 1.1 mΩ max at 10 V and 1.3 mΩ max at 4.5 V, allowing the device to minimize conduction losses and operate at lower temperatures. In addition, a continuous drain current of 200 A can be sustained, allowing engineers to create robust designs with an additional margin for safety-critical applications.
The SQM200N04-1m1L released today is optimized for high-power automotive motor drive applications, including electric power steering. The device is designed and 100 % tested in production to withstand single pulse avalanche events of 100 A and 500 mJ. It also features low thermal resistance of 0.4 °C/W (junction to case), and a wide operating temperature range of -55 °C to +175 °C.
The SQM200N04-1m1L is RoHS-compliant, halogen-free, and 100% Rg and UIS tested. The device extends Vishay's family of AEC-Q101 qualified TrenchFET power MOSFETs.
Samples and production quantities of the new automotive power MOSFET are available now, with lead times of 14 to 16 weeks for large orders.
