Components

ST Introduces MDmesh™ V Power-MOSFET Technology

STMicroelectronics (ST) has announced what it describes as a performance breakthrough for silicon power MOSFETs by achieving what it claims is the best on-resistance per die area with its latest MDmesh™ V technology. MDmesh V will enable a new generation of 650V MOSFETs with RDS(ON) reaching below 0.079Ω in compact power packages to deliver what is said to be industry-leading efficiency and power density. These devices target power-conversion systems where small size and low energy consumption are major goals for design engineers.

Unveiling the first MDmesh V devices available to the market, ST specified RDS(ON) of 0.079Ω for the 33A STP42N65M5 in the TO-220 package. This saving contributes to efficiency improvements, which ST claims delivers the industry’s best RDS(ON) in the majority of the power conversion systems. The complete STx42N65M5 family offers additional package options including the surface-mount D2PAK as well as TO-220FP, I2PAK, and TO-247. The STx16N65M5 family, also at 650V, is in full production, rated at 0.299Ω RDS(ON) and 12A. ST’s roadmap for MDmesh V 650V MOSFETs includes higher current devices with RDS(ON) as low as 0.022Ω in Max247 and 0.038Ω in TO-247. These devices will be available in March 2009.

"The improvement in RDS(ON) achieved with MDmesh V will significantly reduce losses in line-voltage PFC circuits and power supplies, which will in turn enable new generations of electronic products offering better energy ratings and smaller dimensions," said Maurizio Giudice, Marketing Director, Power MOSFET Division, STMicroelectronics. "This new technology will help product designers tackle emerging challenges such as the high efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital Watts normally lost in power-control modules."

As the latest evolution of ST’s Multi-Drain Mesh technology, MDmesh V achieves its RDS(ON) per area performance by improving the transistor drain structure to lower the drain-source voltage drop. This reduces the device’s on-state losses while also maintaining low gate charge (Qg), enabling energy-efficient switching at high speeds and delivering a low ‘RDS(ON) x Qg’ Figure of Merit (FOM). ST claims that the breakdown voltage of 650V is also higher than competing 600V devices, delivering a valuable safety margin for designers. A further advantage of ST’s MDmesh V MOSFETs is a cleaner turn-off waveform, enabling easier gate control and simpler filtering due to reduced EMI.

ST states that the energy savings and higher power density of MDmesh V MOSFETs will deliver tangible improvements for end-user products such as laptop power adapters, LCD monitors and TVs, lighting ballasts, telecom equipment, solar converters, and other applications requiring high-voltage power-factor correction or switched-mode power conversion.

Prices for the STx42N65M5 begin at $10.00 and the STx16N65M5 are available from $6.00, in quantities of 1000 units.

STMicroelectronics Inc.
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