Microsemi Corporation yesterday at PCIM Europe introduced its new silicon carbide (SiC) MOSFET product family with new 1200V solutions. The innovative new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical. These applications include solutions for solar inverters, electric vehicles, welding and medical devices. The new SiC MOSFETs provide patented technology from Microsemi and are designed to help customers develop solutions that operate at higher frequency and improve system efficiency. Microsemi’s SiC MOSFETs are also complimented by Microsemi’s complete product line of SiC Schottky Diodes. The new 1700V SiC Schottky Diode expands the line beyond the 1200V and 650V. These products are designed with superior passivation technology for ruggedness in outdoor and humid applications.
“Microsemi’s 1200V SiC MOSFETs are establishing a new benchmark for performance,” said Marc Vandenberg, general manager for Microsemi’s Power Products Group. “Microsemi continues to expand its SiC product portfolio by capitalizing on our in-house SiC fabrication capabilities and delivering innovative high-power solutions to our customers.”
Microsemi’s 1200V SiC MOSFETs are rated at 80 milliohms and 50 milliohms and provide customers more development flexibility by offering both industry standard TO-247 and SOT-227 packages: APT40SM120B, 1200V, 80milliohm, 40A, TO-247 package; APT40SM120J, 1200V, 80milliohm, 40A, SOT-227 package; APT50SM120B, 1200V, 50milliohm, 50A, TO-247 package; and APT50SM120J, 1200V, 50milliohm, 50A, SOT-227 package.
Microsemi’s patented SiC MOSFET technology features include: Best-in-class RDS(on) vs. temperature; Ultra-low gate resistance for minimizing switching energy loss; Superior maximum switching frequency; Outstanding ruggedness with superior short circuit withstand.
Microsemi’s new 1200V SiC MOSFETs are available now in TO-247 packages and in July 2014 in SOT-227 packages. SiC MOSFET power modules and the 1700V Schottky Diode are available now.