New Industry Products

NEC Electronics America Introduces Four New MOSFET Devices For Portable and Industrial Markets

April 01, 2009 by Jeff Shepard

NEC Electronics America, Inc. introduced to the Americas four new metal-oxide-semiconductor field-effect-transistor (MOSFET) products, the N0100P, N0301P, N0302P and N0301N. All of these new MOSFETs are housed in thin SOT-23F (flat-lead) packages and are capable of achieving a range of current up to 4.5A, with the N0301N device at 4.5A. The new products are said to allow designers to develop lighter and slimmer products for space- and power-critical portable and industrial applications.

"As the mobile and industrial electronics markets continue to expand, we expect demand for MOSFETs with advanced functions to grow," said Kazu Yamada, Vice President, Custom SOC Solutions Strategic Business Group, NEC Electronics America. "To address these opportunities, NEC Electronics has been actively developing its business in this field by launching MOSFETs with packages that manage low on-resistance, use the company’s advanced techniques such UMOS technology, and apply multi-bonding and wireless bonding technologies."

To deliver these slim packages, NEC Electronics improved the lead structure of the new MOSFET packages, employing a flat-lead structure instead of the conventional gull-wing structure. This makes it possible to decrease the package height by 0.1mm while achieving the same footprint of the SOT-23 package commonly used in power-sensitive designs. According to the company, traditionally, designers requiring high-current capabilities were limited to larger packages such as the industry standard package, the SC-62. NEC Electronics states that its new SOT-23F products will enable designers to achieve the same high current in a device that is a fraction of the size.

Further, by adopting a flat-lead structure, the new packages are capable of holding larger chips while still providing the high current capabilities of up to 4.5A. These larger chips enable the new MOSFETs to reduce on-resistance by up to 20% compared to existing MOSFETs, according to the company.

Samples of the new MOSFETS are available now with varied pricing based on current and on-resistance. For example, the N0301N MOSFET with 4.5A of current and 33mΩ of on-resistance is priced at US$0.32 per unit. Mass production of these new products is scheduled to begin in June 2009 with a targeted monthly production of 5,000,000 units.