Mitsubishi Electric Intros MGF095XP FET Family
Mitsubishi Electric Engineering Co. Ltd. (Japan) introduced its new MGF095XP power GaAs FET family, which exhibits high linearity performance at frequencies from cellular bands through U-NII band (5.725GHz to 5.825GHz), making the devices suitable for WLAN, receiver amplifiers and basestation transmitter applications.
Available in plastic mold, lead-frame package measuring 4.5mm x 3.4mm, the FETs feature an IM3 performance of -45dBc with 50-percent power-added efficiency. The IP3 performance is 42dBm for the MGF0951P device and 47.5dBm for the MGF0952P device. The MGF0951P also offers 31dBm of output power with 13dB of gain at 2.15GHz, and a thermal resistance of 20°C/W. The MGF0952P has 36.5dBm of output power with 13.5dB of gain at 2.15GHz, and a thermal resistance of 5°C/W.
