GaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz
Integra Technologies has released a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50 Ohms and supplies 50W of peak pulsed output power at 50V drain bias.
This product covers the frequency range 5.2-5.9 GHz with instantaneous response, and features 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions. The device is housed in a RoHS-compatible metal/ceramic flange-mount package with gold metallization.
It provides excellent thermal dissipation, and measures 0.800″ (20.32mm) wide and 0.400″ (10.16mm) in length. It is 100% high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D. Internal assembly is done with a chip and wire approach by expert certified assemblers.
This 50W transistor is designed for use in C-band pulsed radar system designs that require immediate full power and high gain.