International Rectifier Corp. (IR) announced the introduction of the IRFH7185TRPbF 100V FastIRFET™ power MOSFET that delivers benchmark performance for dc-dc converters used in telecom applications. The IRFH7185TRPbF utilizes IR’s new 100V FastIRFET™ process to offer benchmark Rds(on)*Qg figure of merit to deliver higher efficiency and increased power density as well as enhanced system reliability. The IRFH7185TRPbF is rated for 123A at 25 degrees C. It has a typical RDS(on) at 10V Vgx of 4.2 milliOhms, a Qg at 4.5V of 36 nC and Rds(on)*Qg of 151.2 with 10Vgs.
"The IRFH7185TRPbF offers ultra-low Rds(on) with significantly lower gate charge than alternative devices to enable high performance from light load to full load. The new 100V FastIRFET device structure offers a twenty percent (20%) improvement in avalanche current density to deliver the industry's most robust solution for dc-dc telecom power supplies," said David Schroeder, Executive Director, IR's Power Management Devices Business Unit.
IR's FastIRFET devices work with any controller or driver to offer design flexibility while delivering higher current, efficiency and frequency capability in a small footprint. The IRFH7185TRPbF is qualified to industrial grade and moisture sensitivity level 1 (MSL1), and is available in an industry standard 5×6 PQFN package that features an environmentally friendly, lead-free and RoHS compliant bill of materials. Pricing for the IRFH7185TRPBF FastIRFET starts at US $1.15 in 1,000-unit quantities. Production orders are available immediately.