Zetex Ltd. (Hong Kong) has announced an extended series of n-channel trench MOSFETs that exhibit low on-resistance and low gate charge, the ZXMN2A03E6 and the ZXMN3A03E6. These devices enable reduced losses and increased circuit efficiency.
The MOSFETs, in SOT23 housing, are rated for 20V and 30V operation and target fast-switching, low-voltage applications. The 20V ZXMN2A03E6 has an on-resistance of only 55 milliohms at 4.5V, and a continuous drain current of 4.5A. A typical gate charge of 8.6nC ensures suitability for HF tasks, including dc/dc conversion. The 30V ZXMN3A03E6 offers an on-resistance of only 50 milliohms at 10V, and a gate charge of 12.6nC.
Applications include equipment powered by low-voltage, single-cell sources, such as portable devices, including phones, PDAs and camcorders.
