Siliconix Inc. (Santa Clara, CA) launched three new chip-scale MICRO FOOT devices, the Si8401DB, Si8405DB and DG3000, which use a solder-bump process to eliminate the need for an outer package to encase the power MOSFET die, reducing the size of the devices required to switch power and analog signals in cell phones and other hand-held electronic systems.
Measuring 1.6mm x 1.6mm with a 0.65mm height profile, the single p-channel Si8405DB MOSFET is cliamed to be the industry’s first device with a 12V breakdown voltage and chip-scale MOSFET rated for operation at a -1.8V gate drive. On-resistance specifications range from 55 milliohms at a -4.5V gate drive to 90 milliohms at -1.8V.
For applications where a higher breakdown voltage is needed, Siliconix offers the Si8401DB, a single p-channel device with a drain-to-source voltage of 20V and a maximum on-resistance of 65 milliohms at a -4.5V gate drive or 95 milliohms at a -2.5V gate drive.
The DG3000 analog switch is rated for operation at 1.8V, measures 1.07mm x 1.57mm with a 0.7mm height profile, and features an industry-best charge injection specification of 5pC, which reduces glitching and improves accuracy. The DG3000 also features the lowest on-resistance of any chip-scale analog switch capable of handling frequencies over 100MHz, just 1.4 ohms, reducing time between charges in battery-operated systems, according to the company.
Samples and production quantities of the Si8401DB, Si8405DB and DG3000 are available now, with lead times of four weeks for larger orders. Pricing for US delivery in 100,000-piece quantities is $0.36 for the Si8401DB and Si8405DB, and $0.47 for the
DG3000.
