International Rectifier Corp. (IR) introduced a rugged, reliable ultra-fast 1400V trench Insulated Gate Bipolar Transistor (IGBT) optimized for soft switching applications including induction cooktops and microwave ovens. Co-packaged with an ultra-low forward voltage diode, the IRG7PK35UD1PbF utilizes IR’s Gen7 thin-wafer trench technology to deliver extremely low VCE(ON) and ultra-fast switching to offer lowest conduction and switching losses for high system efficiency in induction heating applications. Expanding the voltage range of the device to 1400V enables the design of higher power single-ended parallel resonant power converters and offers additional guard band for more robust designs.
"Leveraging IR's 1400V Trench Gate, Field Stop technology, the IRG7PK35UD1PbF is optimized for lowest conduction and switching losses and enhanced system reliability in induction heating and soft switching applications," said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR's Energy Saving Products Business Unit.
The IRG7PK35UD1PbF expands IR's proven family of IGBTs for soft-switching applications to 1400V, extending the power range of induction heating systems. IR's focus on power applications allows for optimization of devices to meet the technical requirements of various power systems. Pricing begins at US $3.87 each for the IRG7PK35UD1PbF and US $3.98 each for the IRG7PK35UD1-EPbF in 10,000-unit quantities. Production quantities are available immediately.