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Taiyo Yuden gets GE IP for Si, SiC and GaN Embedded Circuits

July 27, 2016 by Jeff Shepard

Taiyo Yuden Co., Ltd. and GE Ventures announced that GE Ventures has licensed intellectual property (IP) to Taiyo Yuden for fabricating substrates embedded with electronic circuits. With this technology transfer, Taiyo Yuden and GE will construct a joint development framework toward the commercialization of next-generation wirebondless, embedded electronics circuits.

Taiyo Yuden will develop Si-, SiC- and GaN-based wirebondless embedded electronics circuits with the technology and the patent licenses provided by GE Ventures Licensing. Embedded electronic packaging technologies provide significantly improved electrical performance (for example, reduced parasitics), can increase functional density of the electronics circuits by more than a third, and can increase efficiency by over 10%.

“We are extremely pleased to have Taiyo Yuden as an embedded electronics partner,” said Pat Patnode, President of Licensing at GE Ventures. “The strong demand for high performance electronics circuits continues to drive advance research, and GE is excited to partner with Taiyo Yuden to bring wirebondless embedded packaging solutions to the next generation of electronics.” These embedded electronics circuits can be built into higher level power assemblies and systems for a wide variety of applications.

“Taiyo Yuden will target power devices, Internet of Things (IoT), and wearable applications with this GE Power Overlay (POL) technology. This technology will allow additional new application opportunities leveraging the strength of Taiyo Yuden’s current packaging and assembly technology capability and experience,” said Hiroshi Kishi, Operating Officer, Research and Development Laboratory.