Toshiba America Electronic Components Inc. (TAEC, Irvine, CA), with parent company Toshiba Corp., announced that it has developed what is claimed to be the industry's first integration of a power MOSFET and a Schottky barrier diode onto a single die to create a new device, called a MOSBD™, to meet the requirements for greater integration of devices and smaller MOSFET packages for dc/dc converter applications.
Toshiba's first MOSBD, designated the TPC8A01, is a dual-channel device that combines two MOSFETS and a Schottky barrier diode. The device is well suited for dc/dc converters in notebook PCs, PDAs, LCDs and motor drivers for hard disk drives. Toshiba plans to expand the MOSBD line-up to include a single-channel version, integrating two devices (a MOSFET and a SBD). The single-channel version is under development.
The new MOSBDs reduce wiring resistance and inductance due to the elimination of external wiring between the MOSFET and the diode. The new device is also manufactured using Toshiba's UMOS III process technology. The TPC8A01 MOSBD features a small footprint of 30mm² with a thickness of 1.6mm, and is housed in an industry-standard, SOP-8 package.
Customer samples of the TPC8A01 MOSBD are available now and priced in sample quantities at $0.40. The item is in mass production now.
